Manufecturer
NEXTY sales results
Family or series name
Product lifecycle stage
Package type
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Operating ambient temperature[Min] (Cel)
Operating ambient temperature[Max] (Cel)
Operating junction temperature[Min] (Cel)
Operating junction temperature[Max] (Cel)
Number of elements[Nom]
Function type
Dark current (diode)[Typ] (A)
Dark current (diode)[Max] (A)
Dark current (transistor)[Typ] (A)
Dark current (transistor)[Max] (A)
Rise time[Typ] (s)
Fall time[Typ] (s)
Peak wavelength[Typ] (m)
Output function of photo detector
Supply voltage[Min] (V)
Supply voltage[Typ] (V)
Supply voltage[Max] (V)
Supply current[Typ] (A)
Supply current[Max] (A)
Applied filter:
None
  1. IC (656,095)

Purchase Number of records to be displayed:
OSRAM Opto Semiconductors
PHOTO DETECTORS Silicon NPN Phototransistor Mass production clear epoxy PCB insertion 1.27mm 3 - -40Cel 80Cel Si 1 1nA 50nA 8micros 8micros Lin analog out
OSRAM Opto Semiconductors
PHOTO DETECTORS TO18 Silicon NPN Phototransistor Mass production DIL PCB insertion 2.54mm 3 - -40Cel 80Cel Si 1 1nA 50nA 8micros 8micros Lin analog out
Infineon Technologies
PHOTO DETECTORS Mass production 100nA 850nm
Infineon Technologies
PHOTO DETECTORS Mass production 100nA 850nm
Infineon Technologies
PHOTO DETECTORS Mass production 100nA 850nm
OSRAM Opto Semiconductors
PHOTO DETECTORS TO18 Silicon NPN Phototransistor Mass production DIL PCB insertion 2.54mm 3 - -40Cel 80Cel Si 1 1nA 50nA 8micros 8micros Lin analog out
Infineon Technologies
PHOTO DETECTORS Mass production 100nA 850nm
Vishay Intertechnology
PHOTO DETECTORS Silicon PIN Photodiode Mass production GaAs 2nA 30nA 100ns 100ns 950nm
Infineon Technologies
PHOTO DETECTORS Mass production 2.00nA
OSRAM Opto Semiconductors
PHOTO DETECTORS Silicon PIN Photodiode with Daylight Blocking Filter Mass production DIL/Epoxy PCB insertion 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out
OSRAM Opto Semiconductors
PHOTO DETECTORS Silicon PIN Photodiode with Daylight Blocking Filter Mass production SMT DIL/Epoxy Surface mount technology 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out
OSRAM Opto Semiconductors
PHOTO DETECTORS DIL SMT Silicon PIN Photodiode with Daylight Blocking Filter Mass production Surface mount technology 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out
OSRAM Opto Semiconductors
PHOTO DETECTORS Silicon PIN Photodiode with Daylight Blocking Filter Mass production black epoxy Surface mount technology 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out
Infineon Technologies
PHOTO DETECTORS Mass production 2.00nA
OSRAM Opto Semiconductors
PHOTO DETECTORS Silicon PIN Photodiode with Daylight Blocking Filter Mass production black epoxy Surface mount technology 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out
OSRAM Opto Semiconductors
PHOTO DETECTORS Silicon PIN Photodiode Mass production SMT DIL/Epoxy Surface mount technology 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out
Infineon Technologies
PHOTO DETECTORS Mass production 2.00nA
OSRAM Opto Semiconductors
PHOTO DETECTORS DIL SMT Silicon PIN Photodiode Mass production Surface mount technology 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out
OSRAM Opto Semiconductors
PHOTO DETECTORS Silicon PIN Photodiode Mass production Surface mount technology 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out
OSRAM Opto Semiconductors
PHOTO DETECTORS DIL SMT Silicon PIN Photodiode Mass production Surface mount technology 2 -40Cel 100Cel Si 1 2nA 30nA 0.02micros 0.02micros Lin analog out