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Part number	Manufecturer	Product's class name	Product name	Product lifecycle stage	Package type	Body length[Typ]	Body breadth[Typ]	Body height[Typ]	Mounting method	Pin Pitch[Min]	Pin Pitch[Typ]	Pin Pitch[Max]	Number of terminals[Nom]	AEC compliant	Channel temperature[Max]	Number of transistors[Nom]	Channel type	Drain current (DC)[Max]	Allowable power dissipation[Max]	Gate-source threshold voltage[Min]	Gate-source threshold voltage[Max]	Drain-source voltage[Max]	Drain-source current[Max]	Drain-source on-resistance @10V[Typ]	Drain-source on-resistance @10V[Max]	Gate-source voltage at R_DS(on)_@10V[Typ]	Drain-source on-resistance @4.5Vor4V[Typ]	Drain-source on-resistance @4.5Vor4V[Max]	Gate-source voltage at R_DS(on)_@4.5Vor4V[Typ]	Drain-source on-resistance 1[Typ]	Drain-source on-resistance 1[Max]	Gate-source voltage 1 at R_DS(on)_1[Typ]
1HN04CH-TL-W	ON Semiconductor	MOS FETS	Power MOSFET, 100 V, 8 Ohm, 270 mA, Single N-Channel	Mass production	CPH3/SC-59/SOT-23/TO-236	2.9mm	1.6mm	0.9mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	270mA	0.6W	1.2V	2.6V	100V	1microA	6Ohm	8Ohm	10V	6.8Ohm	9.8Ohm	4V
1HP04CH-TL-W	ON Semiconductor	MOS FETS	Small Signal MOSFET -100V, 18ohm, -170mA, Single P-Channel	Mass production	CPH3/SC-59/SOT-23/TO-236	2.9mm	1.6mm	0.9mm	Surface mount technology		0.95mm		3	-	150Cel	1	P ch	-170mA	0.6W	-1.2V	-2.6V	-100V	-1microA	12.5Ohm	18Ohm	-10V	14Ohm	21Ohm	-4V
2N7000	Fairchild Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92 + Forming	4.76mm	3.62mm	4.825mm	PCB insertion		1.27mm		3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7000	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92-3L/135AN	4.76mm	3.62mm	4.825mm	PCB insertion		1.27mm		3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7000-D26Z	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92-3L/135AR	4.76mm	3.62mm	4.825mm	PCB insertion	2.4mm	2.6mm	2.8mm	3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7000-D74Z	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92-3L/135AR	4.76mm	3.62mm	4.825mm	PCB insertion	2.4mm	2.6mm	2.8mm	3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7000-D75Z	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92-3L/135AR	4.76mm	3.62mm	4.825mm	PCB insertion	2.4mm	2.6mm	2.8mm	3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7002	Nexperia	MOS FETS	60 V, 300 mA N-channel Trench MOSFET	Mass production	SOT23/TO-236AB	2.9mm	1.3mm	1mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	0.3A	0.83W	1V	2.5V	60V	1microA	2.8Ohm	5Ohm	10V	3.8Ohm	5.3Ohm	4.5V
2N7002	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA	1.2Ohm	7.5Ohm	10V				1.7Ohm	7.5Ohm	5V
2N7002	WUXI NCE POWER	MOS FETS	NCE N-Channel Enhancement Mode Power MOSFET	Mass production	SOT-23	2.9mm	1.3mm	0.975mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	0.115A	0.2W	1V	2.5V	60V	1microA	1.1Ohm	2Ohm	10V				1.3Ohm	3Ohm	5V
2N7002	Infineon Technologies	MOS FETS	OptiMOS Small-Signal-Transistor	Mass production	TO-263AB	2.9mm	1.3mm	0.95mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	0.3A	0.5W	1.5V	2.5V	60V		1.6Ohm	3Ohm	10V	2Ohm	4Ohm	4.5V
2N7002	Fairchild Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	SOT-23 3L	2.92mm	1.3mm	0.93mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA	1.2Ohm	7.5Ohm	10V				1.7Ohm	7.5Ohm	5V
2N7002	Yangzhou Yangjie Electronic Technology	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	SOT-23	2.9mm	1.3mm	0.975mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	340mA	350mW	1V	2.5V	60V	1microA	1.2Ohm	2.5Ohm	10V	1.3Ohm	3Ohm	4.5V
2N7002-13-F	DIODES	MOS FETS	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	Mass production	SOT-23	2.9mm	1.3mm	0.975mm	Surface mount technology	0.89mm	0.915mm	1.03mm	3	○	150Cel	1	N ch	210mA	370mW	1V	2.5V	60V	1microA	2.4Ohm	5Ohm	10V				3.2Ohm	7.5Ohm	5V
2N7002-7-F	DIODES	MOS FETS	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	Mass production	SOT-23	2.9mm	1.3mm	0.975mm	Surface mount technology	0.89mm	0.915mm	1.03mm	3	○	150Cel	1	N ch	210mA	370mW	1V	2.5V	60V	1microA	2.4Ohm	5Ohm	10V				3.2Ohm	7.5Ohm	5V
2N7002A	WUXI NCE POWER	MOS FETS	NCE N-Channel Enhancement Mode Power MOSFET	Mass production	SOT-23	2.9mm	1.3mm	0.975mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	0.115A	0.2W	1V	2.5V	60V	1microA	2.1Ohm	3Ohm	10V				2.3Ohm	3.5Ohm	5V
2N7002A	Yangzhou Yangjie Electronic Technology	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	SOT-23	2.9mm	1.3mm	0.975mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	340mA	350mW	1V	2.5V	60V	1microA	1.2Ohm	2.5Ohm	10V	1.3Ohm	3Ohm	4.5V
2N7002A-13	DIODES	MOS FETS	N-CHANNEL ENHANCEMENT MODE MOSFET	Mass production	SOT-23	2.9mm	1.3mm	0.975mm	Surface mount technology	0.89mm	0.915mm	1.03mm	3	○	150Cel	1	N ch	220mA	370mW	1.2V	2V	60V	1microA	3Ohm	5Ohm	10V				3.5Ohm	6Ohm	5V
2N7002A-7	DIODES	MOS FETS	N-CHANNEL ENHANCEMENT MODE MOSFET	Mass production	SOT-23	2.9mm	1.3mm	0.975mm	Surface mount technology	0.89mm	0.915mm	1.03mm	3	○	150Cel	1	N ch	220mA	370mW	1.2V	2V	60V	1microA	3Ohm	5Ohm	10V				3.5Ohm	6Ohm	5V
2N7002AK	Lite-On Semiconductor	MOS FETS	N-Channel 60 V MOSFET	Mass production	SOT23S	2.895mm	1.4mm	1.145mm	Surface mount technology	0.85mm	0.95mm	1.05mm	3	-	150Cel	1	N ch	0.115A	0.225W	1V	2V	60V	1microA	2.5Ohm	7.5Ohm	10V				3Ohm	7.5Ohm	5V