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VARIABLE CAPACITANCE DIODES

Discrete > DIODES > VARIABLE CAPACITANCE DIODES (376)
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Manufecturer
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Family or series name
Product lifecycle stage
Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Junction temperature[Max] (Cel)
Number of diodes[Nom]
Capacitance ratio[Min]
Series resistance[Max] (Ohm)
Reverse voltage[Max] (V)
Terminal capacitance[Min] (F)
Terminal capacitance[Max] (F)
Applied filter
None

Purchase Number of records to be displayed:
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Scheduled to be discontinued SC-59/1-3G1F 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 - 125Cel 2 2.1 0.5Ohm 28.5pF 32.5pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production USC / 1-1E1S 1.25mm 1.7mm 0.9mm Surface mount technology 125Cel 1 2 0.4Ohm 5.5pF 6.5pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Scheduled to be discontinued 1-1E1A 1.7mm 1.25mm 0.9mm Surface mount technology 2 - 125Cel 1 14 1.25Ohm 41pF 49.5pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production USC / 1-1E1S 1.25mm 1.7mm 0.9mm Surface mount technology 125Cel 1 2 0.6Ohm 1.5pF 2pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Scheduled to be discontinued 1-1E1A 1.7mm 1.25mm 0.9mm Surface mount technology 2 - 125Cel 1 1.03 0.8Ohm 33pF 38pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production USC / 1-1E1S 1.25mm 1.7mm 0.9mm Surface mount technology 125Cel 1 1.8 0.5Ohm 7.3pF 8.7pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production USC / 1-1E1S 1.25mm 1.7mm 0.9mm Surface mount technology 125Cel 1 2 0.55Ohm 1.85pF 2.35pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production ESC / 1-1G1S 0.8mm 1.2mm 0.6mm Surface mount technology 125Cel 1 2 0.4Ohm 5.5pF 6.5pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production ESC / 1-1G1S 0.8mm 1.2mm 0.6mm Surface mount technology 125Cel 1 2 0.6Ohm 1.5pF 2pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production ESC / 1-1G1S 0.8mm 1.2mm 0.6mm Surface mount technology 125Cel 1 1.8 0.5Ohm 7.3pF 8.7pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production ESC / 1-1G1S 0.8mm 1.2mm 0.6mm Surface mount technology 125Cel 1 12 0.8Ohm 2.6pF 3pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production ESC / 1-1G1S 0.8mm 1.2mm 0.6mm Surface mount technology 125Cel 1 7.8 0.9Ohm 1.85pF 2.35pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Scheduled to be discontinued 1-1E1A(TOS) 1.7mm 1.25mm 0.9mm Surface mount technology 125Cel 1 15 1.05Ohm 1.56pF 1.86pF
SANYO Semiconductor
VARIABLE CAPACITANCE DIODES Mass production CPH4 Surface mount technology 125Cel 7Ohm
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production USC / 1-1E1S 1.25mm 1.7mm 0.9mm Surface mount technology 125Cel 1 2.8 0.32Ohm 5.3pF 6.6pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production ESC / 1-1G1S 0.8mm 1.2mm 0.6mm Surface mount technology 125Cel 1 5 2Ohm 5.3pF 6.6pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production USC / 1-1E1S 1.25mm 1.7mm 0.9mm Surface mount technology 125Cel 1 1.8 0.4Ohm 4.45pF 5.45pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production ESC / 1-1G1S 0.8mm 1.2mm 0.6mm Surface mount technology 125Cel 1 2.4 0.45Ohm 4.45pF 5.45pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Scheduled to be discontinued ESC/1-1G1A 1.2mm 0.8mm 0.6mm Surface mount technology 2 - 125Cel 1 2.4 0.45Ohm 7.3pF 8.4pF
Toshiba Corporation Semiconductor
VARIABLE CAPACITANCE DIODES Mass production USC / 1-1E1S 1.25mm 1.7mm 0.9mm Surface mount technology 125Cel 1 4 0.8Ohm 6pF 7.1pF