|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-23 |
2.9mm |
1.3mm |
0.975mm |
表面実装
|
|
0.95mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-23 |
2.9mm |
1.3mm |
0.975mm |
表面実装
|
|
0.95mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-363 |
2mm |
1.25mm |
0.95mm |
表面実装
|
|
0.65mm |
|
6 |
- |
2 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-523 |
1.6mm |
0.8mm |
0.7mm |
表面実装
|
|
0.5mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-23 |
2.9mm |
1.3mm |
0.975mm |
表面実装
|
|
0.95mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-363 |
2mm |
1.25mm |
0.95mm |
表面実装
|
|
0.65mm |
|
6 |
- |
2 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-523 |
1.6mm |
0.8mm |
0.7mm |
表面実装
|
|
0.5mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
DFN1006 |
1mm |
0.6mm |
0.46mm |
表面実装
|
|
0.35mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-723 |
1.2mm |
0.8mm |
0.465mm |
表面実装
|
|
0.4mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-323 |
2mm |
1.25mm |
0.95mm |
表面実装
|
|
0.65mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-323 |
2mm |
1.25mm |
0.95mm |
表面実装
|
|
0.65mm |
|
3 |
○ |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-563 |
1.6mm |
1.2mm |
0.6mm |
表面実装
|
0.4mm |
0.5mm |
0.6mm |
6 |
- |
2 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-363 |
2mm |
1.25mm |
0.95mm |
表面実装
|
|
0.65mm |
|
6 |
○ |
2 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-23 |
2.9mm |
1.3mm |
0.975mm |
表面実装
|
|
0.95mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-323 |
2mm |
1.25mm |
0.95mm |
表面実装
|
|
0.65mm |
|
3 |
○ |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
MOSFET |
N-Channel Enhancement Mode Field Effect Transistor |
量産体制
|
SOT-323 |
2mm |
1.25mm |
0.95mm |
表面実装
|
|
0.65mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
汎用バイポーラトランジスタ |
PNP General Purpose Amplifier |
量産体制
|
SOT-89 |
4.5mm |
3.13mm |
1.5mm |
表面実装
|
|
1.5mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
汎用バイポーラトランジスタ |
PNP General Purpose Amplifier |
量産体制
|
SOT-89 |
4.5mm |
3.13mm |
1.5mm |
表面実装
|
|
1.5mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
汎用バイポーラトランジスタ |
PNP Transistor |
量産体制
|
SOT-23 |
2.9mm |
1.3mm |
0.975mm |
表面実装
|
|
0.95mm |
|
3 |
- |
1 |
|
|
|
Yangzhou Yangjie Electronic Technology
|
|
|
汎用バイポーラトランジスタ |
PNP Transistor |
量産体制
|
SOT-23 |
2.9mm |
1.3mm |
0.975mm |
表面実装
|
|
0.95mm |
|
3 |
- |
1 |