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Toshiba Corporation Semiconductor

Part number	Manufecturer	Product's class name	Product lifecycle stage	Package type	Body length[Typ]	Body breadth[Typ]	Body height[Typ]	Mounting method	Pin Pitch[Min]	Pin Pitch[Typ]	Pin Pitch[Max]	Number of terminals[Nom]	AEC compliant	Channel temperature[Max]	Number of transistors[Nom]	Channel type	Drain current (DC)[Max]	Allowable power dissipation[Max]	Gate-source threshold voltage[Min]	Gate-source threshold voltage[Max]	Drain-source voltage[Max]	Drain-source current[Min]	Drain-source current[Max]	Drain-source on-resistance @10V[Typ]	Drain-source on-resistance @10V[Max]	Gate-source voltage at R_DS(on)_@10V[Typ]	Drain-source on-resistance @4.5Vor4V[Typ]	Drain-source on-resistance @4.5Vor4V[Max]	Gate-source voltage at R_DS(on)_@4.5Vor4V[Typ]	Drain-source on-resistance @2.5V[Typ]	Drain-source on-resistance @2.5V[Max]	Gate-source voltage at R_DS(on)_@2.5V[Typ]
2SJ168	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236MOD/SC-59/2-3F1F	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	150Cel	1	P ch	-0.2A	200mW	-2V	-3.5V	-60V		-10microA	1.3Ohm	2Ohm	-10V
2SJ305	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236MOD/SC-59/2-3F1F	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	150Cel	1	P ch	-0.2A	200mW	-0.5V	-1.5V	-30V		-10microA							2.4Ohm	4Ohm	-2.5V
2SJ360	Toshiba Corporation Semiconductor	MOS FETS	New design not recommended	SC-62/2-5K1B		2.5mm		Surface mount technology	1.4mm	1.5mm	1.6mm	3	-	150Cel	1	P ch	-1A	0.5W	-0.8V	-2V	-60V		-100microA	0.55Ohm	0.73Ohm	-10V	0.86Ohm	1.2Ohm	-4V
2SJ377	Toshiba Corporation Semiconductor	MOS FETS	New design not recommended	2-7J1B	6.5mm	5.5mm	2.3mm	Surface mount technology	2.15mm	2.3mm	2.45mm	3	-	150Cel	1	P ch	-5A	20W	-0.8V	-2V	-60V		-100microA	0.16Ohm	0.19Ohm	-10V	0.24Ohm	0.28Ohm	-4V
2SK1062	Toshiba Corporation Semiconductor	MOS FETS	New design not recommended	SC-59/2-3F1F	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	0.2A	200mW	2V	3.5V	60V		10microA	0.6Ohm	1Ohm	10V
2SK2009	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236MOD/SC-59/2-3F1F	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	0.2A	200mW	0.5V	1.5V	30V		10microA							1.2Ohm	2Ohm	2.5V
2SK208_GR	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236MOD/SC-59/2-3F1B	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	125Cel	1	N ch		100mW	0.4V	5V		2.6mA	6.5mA
2SK208_O	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236MOD/SC-59/2-3F1B	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	125Cel	1	N ch		100mW	0.4V	5V		0.6mA	1.4mA
2SK208_R	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236MOD/SC-59/2-3F1B	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	125Cel	1	N ch		100mW	0.4V	5V		0.3mA	0.75mA
2SK208_Y	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236MOD/SC-59/2-3F1B	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	125Cel	1	N ch		100mW	0.4V	5V		1.2mA	3mA
2SK209_BL	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236/SC-59/2-3F1B	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	125Cel	1	N ch		150mW	0.2V	1.5V		6mA	14mA
2SK209_GR	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236/SC-59/2-3F1B	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	125Cel	1	N ch		150mW	0.2V	1.5V		2.6mA	6.5mA
2SK209_Y	Toshiba Corporation Semiconductor	MOS FETS	Mass production	TO-236/SC-59/2-3F1B	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	125Cel	1	N ch		150mW	0.2V	1.5V		1.2mA	3mA
2SK2145_BL	Toshiba Corporation Semiconductor	MOS FETS	Mass production	SOT-25/SC-74A/2-3L1C	2.9mm	1.6mm	1.1mm	Surface mount technology		0.95mm		5	-	125Cel	2	N ch		300mW	0.2V	1.5V		6mA	14mA
2SK2145_GR	Toshiba Corporation Semiconductor	MOS FETS	Mass production	SOT-25/SC-74A/2-3L1C	2.9mm	1.6mm	1.1mm	Surface mount technology		0.95mm		5	-	125Cel	2	N ch		300mW	0.2V	1.5V		2.6mA	6.5mA
2SK2145_Y	Toshiba Corporation Semiconductor	MOS FETS	Mass production	SOT-25/SC-74A/2-3L1C	2.9mm	1.6mm	1.1mm	Surface mount technology		0.95mm		5	-	125Cel	2	N ch		300mW	0.2V	1.5V		1.2mA	3mA
2SK2231	Toshiba Corporation Semiconductor	MOS FETS	New design not recommended	2-7J1B	6.5mm	5.5mm	2.3mm	Surface mount technology	2.15mm	2.3mm	2.45mm	3	-	150Cel	1	N ch	5A	20W	0.8V	2V	60V		100microA	0.12Ohm	0.16Ohm	10V	0.2Ohm	0.3Ohm	4V
2SK2313	Toshiba Corporation Semiconductor	MOS FETS	Mass production	SC-65/2-16C1B			20mm	PCB insertion	5.25mm	5.45mm	5.65mm	3	-	150Cel	1	N ch	60A	150W	0.8V	2V	60V		100microA	8mOhm	11mOhm	10V	12mOhm	15mOhm	4V
2SK2854	Toshiba Corporation Semiconductor	MOS FETS	Mass production	2-5K1D/SC-62		2.5mm		Surface mount technology	1.4mm	1.5mm	1.6mm	3	-	150Cel	1	N ch	0.5A	0.5W	1V	1.8V	10V		100nA
2SK3074	Toshiba Corporation Semiconductor	MOS FETS	Mass production	2-5K1D/SC-62		2.5mm		Surface mount technology	1.4mm	1.5mm	1.6mm	3	-	150Cel	1	N ch	1A	3W	1.4V	2.4V	30V		10microA