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FIELD EFFECT TRANSISTORS

Discrete > TRANSISTORS > FIELD EFFECT TRANSISTORS (30,948)
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Purchase Number of records to be displayed:
SANYO Semiconductor
JUNCTION FETS Mass production CPH3 2.9mm 1.6mm 0.9mm Surface mount technology 150Cel 1
ON Semiconductor
MOS FETS Power MOSFET, 100 V, 8 Ohm, 270 mA, Single N-Channel Mass production CPH3/SC-59/SOT-23/TO-236 2.9mm 1.6mm 0.9mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch
ON Semiconductor
MOS FETS Small Signal MOSFET -100V, 18ohm, -170mA, Single P-Channel Mass production CPH3/SC-59/SOT-23/TO-236 2.9mm 1.6mm 0.9mm Surface mount technology 0.95mm 3 - 150Cel 1 P ch
ON Semiconductor
JUNCTION FETS JFET Switching N-Channel-Depletion Mass production TO-92(TO-226AA) PCB insertion
ON Semiconductor
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production TO-92-3L/135AN 4.76mm 3.62mm 4.825mm PCB insertion 1.27mm 3 - 150Cel 1 N ch
Fairchild Semiconductor
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production TO-92 + Forming 4.76mm 3.62mm 4.825mm PCB insertion 1.27mm 3 - 150Cel 1 N ch
ON Semiconductor
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production TO-92-3L/135AR 4.76mm 3.62mm 4.825mm PCB insertion 2.4mm 2.6mm 2.8mm 3 - 150Cel 1 N ch
ON Semiconductor
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production TO-92-3L/135AR 4.76mm 3.62mm 4.825mm PCB insertion 2.4mm 2.6mm 2.8mm 3 - 150Cel 1 N ch
ON Semiconductor
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production TO-92-3L/135AR 4.76mm 3.62mm 4.825mm PCB insertion 2.4mm 2.6mm 2.8mm 3 - 150Cel 1 N ch
ON Semiconductor
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23/TO-236 2.9mm 1.3mm 0.94mm Surface mount technology 0.89mm 0.95mm 1.02mm 3 - 150Cel 1 N ch
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch
Nexperia
MOS FETS 60 V, 300 mA N-channel Trench MOSFET Mass production SOT23/TO-236AB 2.9mm 1.3mm 1mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch
WUXI NCE POWER
MOS FETS NCE N-Channel Enhancement Mode Power MOSFET Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch
Infineon Technologies
MOS FETS OptiMOS Small-Signal-Transistor Mass production TO-263AB 2.9mm 1.3mm 0.95mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch
Fairchild Semiconductor
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23 3L 2.92mm 1.3mm 0.93mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch
DIODES
MOS FETS N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.89mm 0.915mm 1.03mm 3 ○ 150Cel 1 N ch
DIODES
MOS FETS N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.89mm 0.915mm 1.03mm 3 ○ 150Cel 1 N ch
WUXI NCE POWER
MOS FETS NCE N-Channel Enhancement Mode Power MOSFET Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch
DIODES
MOS FETS N-CHANNEL ENHANCEMENT MODE MOSFET Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.89mm 0.915mm 1.03mm 3 ○ 150Cel 1 N ch