Manufecturer
NEXTY sales results
Family or series name
Product lifecycle stage
Package type
Mounting method
Pin Pitch[Typ]
Number of terminals[Nom]
AEC compliant
Drain-source voltage[Max] (V)
Gate-source voltage[Max] (V)
Saturation drain current[Min] (A)
Saturation drain current[Typ] (A)
Saturation drain current[Max] (A)
Transconductance[Typ] (S)
Pinch-off voltage[Min] (V)
Pinch-off voltage[Typ] (V)
Pinch-off voltage[Max] (V)
Gate-source breakdown voltage[Min] (V)
Output power at 1dB G.C.P.[Typ] (dBm)
Power gain at 1 dB G.C.P.[Min] (dB)
Power gain at 1 dB G.C.P.[Typ] (dB)
Thermal resistance[Typ] (Cel/W)
Thermal resistance[Max] (Cel/W)
Power-added efficiency[Typ] (%)
Applied filter:
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  1. IC (656,095)

Purchase Number of records to be displayed:
Nexperia
Proven Consumer GALLIUM ARSENIDE FETS 650 V, 50 mOhm Gallium Nitride (GaN) FET Mass production TO-247/SOT429 PCB insertion 5.436mm 3 - 650V 2microA 25microA 40Cel/W
Maxim
GALLIUM ARSENIDE FETS Low-Noise Bias Supply in uMAX with Power-OK for GaAsFET PA Mass production uMAX-10 Surface mount technology 0.5mm 10 -
SANYO Semiconductor
GALLIUM ARSENIDE FETS Discontinued products CP4 Surface mount technology 45mV 34mA -5V 200mCel/W -55Cel/W 150%
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Discontinued products 2-2K1C Surface mount technology 15mA 40mA 80mA -0.8V -2V 18dB 21.5dB
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Discontinued products 2-2K1C Surface mount technology 40mA 55mA 80mA -0.8V -2V 17dB 19.5dB
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Discontinued products 2-4F1A PCB insertion 10V 20mA 45mA -2.5V -4V
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Discontinued products 2-3J1A Surface mount technology 10V 20mA 45mA -2.5V -4V
SANYO Semiconductor
GALLIUM ARSENIDE FETS Discontinued products CP4 Surface mount technology 13V 8.5mA 40mA -3.5V
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Maintained products 2-3J1A Surface mount technology
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Maintained products 2-2K1B Surface mount technology
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Maintained products 2-2K1B Surface mount technology
Broadcom
GALLIUM ARSENIDE FETS High Linearity GaAs FET Mixer IAM-92516 Mass production LPCC 3x3 Surface mount technology 9dBm
Broadcom
GALLIUM ARSENIDE FETS High Linearity GaAs FET Mixer IAM-92516 Mass production LPCC 3x3 Surface mount technology 9dBm
Broadcom
GALLIUM ARSENIDE FETS High Linearity GaAs FET Mixer IAM-92516 Mass production LPCC 3x3 Surface mount technology 9dBm
Broadcom
GALLIUM ARSENIDE FETS High Linearity Integrated GaAs Mixer IAM-93516 Mass production LPCC 3x3 Surface mount technology 19.3dBm 39Cel/W
Broadcom
GALLIUM ARSENIDE FETS High Linearity Integrated GaAs Mixer IAM-93516 Mass production LPCC 3x3 Surface mount technology 19.3dBm 39Cel/W
Broadcom
GALLIUM ARSENIDE FETS High Linearity Integrated GaAs Mixer IAM-93516 Mass production LPCC 3x3 Surface mount technology 19.3dBm 39Cel/W
SANYO Semiconductor
GALLIUM ARSENIDE FETS Discontinued products CP4 Surface mount technology 6V 30mA 45mA 65mA -5V