Manufecturer
NEXTY sales results
Family or series name
Product lifecycle stage
Package type
Mounting method
AEC compliant
Drain-source voltage limit[Max] (V)
Gate-source voltage limit[Max] (V)
Gate-drain voltage limit[Max] (V)
Drain current limit[Max] (A)
Total power dissipation[Max] (W)
Saturation drain current[Min] (A)
Saturation drain current[Typ] (A)
Saturation drain current[Max] (A)
Transconductance[Min] (S)
Transconductance[Typ] (S)
Pinch-off voltage[Min] (V)
Pinch-off voltage[Typ] (V)
Pinch-off voltage[Max] (V)
Gate-source breakdown voltage[Min] (V)
Gate-drain breakdown voltage[Min] (V)
Frequency range[Max] (Hz)
Noise figure[Typ] (dB)
Noise figure[Max] (dB)
Associated gain[Min] (dB)
Associated gain[Typ] (dB)
Thermal resistance[Max] (Cel/W)
Applied filter:
None
  1. IC (656,095)

Purchase Number of records to be displayed:
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS Mass production SOT-143
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS Advance preparation P-TSFP-4-1
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS Advance preparation MW-4
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 1.9dB 2.1dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 1.9dB 2.1dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 1.9dB 2.1dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 1.9dB 2.1dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 1.9dB 2.1dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 1.9dB 2.1dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 1.9dB 2.1dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 1.9dB 2.1dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.2dB 2.4dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.2dB 2.4dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.2dB 2.4dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.2dB 2.4dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.2dB 2.4dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.2dB 2.4dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.2dB 2.4dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.2dB 2.4dB
Infineon Technologies
HIGH ELECTRON MOBILITY TRANSISTORS HiRel X-Band GaAs Low Noise/General Purpose MESFET CFY25 Mass production 4pin Micro-X 250mW 20GHz 2.3dB