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BIPOLAR TRANSISTORS

Discrete > TRANSISTORS > BIPOLAR TRANSISTORS (415)
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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Junction temperature[Max] (Cel)
Number of transistors[Nom]
Number of NPN transistors[Nom]
Number of PNP transistors[Nom]
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
DC current gain[Min]
DC current gain[Max]
Collector-emitter saturation voltage 1[Typ] (V)
Collector-emitter saturation voltage 1[Max] (V)
Collector-emitter saturation voltage 2[Typ] (V)
Collector-emitter saturation voltage 2[Max] (V)
Collector-emitter saturation voltage 3[Typ] (V)
Collector-emitter saturation voltage 3[Max] (V)
Collector-emitter saturation voltage 4[Max] (V)
Collector-emitter saturation voltage 5[Max] (V)
Collector-emitter voltage[Max] (V)
TR polarity
Applied filter
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PAN JIT INTERNATIONAL

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PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS PNP Low Vce(sat) Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 - 150Cel 1 0 1 -3A 1.25W 50 300 -67mV -150mV -0.5A -112mV -200mV -1A -203mV -500mV -2A -50V PNP
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS PNP Low Vce(sat) Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 - 150Cel 1 0 1 -3A 1.25W 50 300 -67mV -150mV -0.5A -112mV -200mV -1A -203mV -500mV -2A -50V PNP
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS PNP Low Vce(sat) Transistor Mass production SOT-23 Surface mount technology 0.95mm 6 - 150Cel 1 0 1 -3A 1.2W 100 500 -100mV -0.5A -200mV -1.6A -20V PNP
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS PNP Low Vce(sat) Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 - 150Cel 1 0 1 -3A 1.25W 60 500 -70mV -0.5A -190mV -1.6A -230mV -2A -300mV -3A -20V PNP
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS PNP Low Vce(sat) Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 - 150Cel 1 0 1 -3A 1.25W 60 500 -70mV -0.5A -190mV -1.6A -230mV -2A -300mV -3A -20V PNP
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS Application Specific Multichip Circuit Mass production SOT-23 Surface mount technology 0.95mm 6 - 150Cel 2 2 0 200mA 1W 30 300 200mV 10mA 300mV 50mA 40V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS Application Specific Multichip Circuit Mass production SOT-23 Surface mount technology 0.95mm 6 - 150Cel 2 2 0 200mA 1W 30 300 200mV 10mA 300mV 50mA 40V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN General Purpose Switching Transistor Mass production SOT-89 Surface mount technology 1.45mm 1.55mm 3 - 150Cel 1 1 0 600mA 1.1W 35 300 0.3V 150mA 1V 500mA 40V NPN 250ns
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN General Purpose Switching Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 ○ 150Cel 1 1 0 500mA 225mW 120 390 0.6V 500mA 32V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN General Purpose Switching Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 ○ 150Cel 1 1 0 500mA 225mW 120 390 0.6V 500mA 32V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN GENERAL PURPOSE SWITCHING TRANSISTOR Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 - 150Cel 1 1 0 500mA 225mW 120 390 0.6V 500mA 32V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN GENERAL PURPOSE SWITCHING TRANSISTOR Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 - 150Cel 1 1 0 500mA 225mW 120 390 0.6V 500mA 32V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN General Purpose Switching Transistor New design not recommended TO-252AA Surface mount technology 2.29mm 3 - 150Cel 1 1 0 3A 1.56W 40 160 0.2V 1V 1A 200V NPN 1500ns
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN Low Vce(sat) Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 - 150Cel 1 1 0 3A 1.25W 200 900 52mV 75mV 100mA 53mV 100mV 500mA 94mV 140mV 1A 50V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN Low Vce(sat) Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 - 150Cel 1 1 0 3A 1.25W 200 900 52mV 75mV 100mA 53mV 100mV 500mA 94mV 140mV 1A 50V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN Darlington Transistor Mass production TO-92S 4.2mm 3.25mm 4.58mm PCB insertion 1.12mm 1.27mm 1.42mm 3 - 150Cel 1 1 0.5A 625mW 10000 1200mV 10mA 1500V 0.1A 80V NPN
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP General Purpose Transistor Mass production SOT-23 Surface mount technology 0.9mm 1mm 3 ○ 150Cel 1 0 1 -500mA 330mW 100 250 -0.7V -500mA -45V PNP
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP General Purpose Transistor Mass production SOT-323 2mm 1.25mm 0.8mm Surface mount technology 0.6mm 0.65mm 0.7mm 3 ○ 150Cel 1 0 1 -500mA 300mW 100 250 -0.7V -500mA -45V PNP
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS PNP GENERAL PURPOSE TRANSISTORS Mass production SOT-323 Surface mount technology 0.6mm 0.7mm 3 ○ 150Cel 1 0 1 -500mA 300mW 100 250 -0.7V -500mA -45V PNP
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS PNP GENERAL PURPOSE TRANSISTOR Mass production SOT-323 0.8mm Surface mount technology 0.6mm 0.7mm 3 - 150Cel 1 0 1 -500mA 300mW 100 250 -0.7V -500mA -45V PNP