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PAN JIT INTERNATIONAL

Part number	Manufecturer	Product's class name	Product name	Product lifecycle stage	Package type	Body length[Typ]	Body breadth[Typ]	Body height[Typ]	Mounting method	Pin Pitch[Min]	Pin Pitch[Typ]	Pin Pitch[Max]	Number of terminals[Nom]	AEC compliant	Channel temperature[Max]	Number of transistors[Nom]	Channel type	Drain current (DC)[Max]	Allowable power dissipation[Max]	Gate-source threshold voltage[Min]	Gate-source threshold voltage[Max]	Drain-source voltage[Max]	Drain-source current[Max]	Drain-source on-resistance @10V[Typ]	Drain-source on-resistance @10V[Max]	Gate-source voltage at R_DS(on)_@10V[Typ]	Drain-source on-resistance @4.5Vor4V[Typ]	Drain-source on-resistance @4.5Vor4V[Max]	Gate-source voltage at R_DS(on)_@4.5Vor4V[Typ]
2N7002K	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET - ESD Protected	Mass production	SOT-23-3L	2.92mm	1.3mm	0.95mm	Surface mount technology	0.9mm	0.95mm	1mm	3	-	150Cel	1	N ch	300mA	350mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002K-AU	PAN JIT INTERNATIONAL	MOS FETS	60 V N-Channel Enhancement Mode MOSFET - ESD Protected	Mass production	SOT-23-3L	2.92mm	1.3mm	0.95mm	Surface mount technology	0.9mm	0.95mm	1mm	3	○	150Cel	1	N ch	300mA	500mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002K-AU_R1_000A2	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-23	2.92mm	1.3mm	0.95mm	Surface mount technology	0.9mm	0.95mm	1mm	3	○	150Cel	1	N ch	300mA	500mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KDW	PAN JIT INTERNATIONAL	MOS FETS	60 V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-363	2.05mm	1.25mm	0.9mm	Surface mount technology	0.55mm	0.65mm	0.75mm	6	-	150Cel	2	N ch	115mA	200mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KDW-AU	PAN JIT INTERNATIONAL	MOS FETS	60 V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-363	2.05mm	1.25mm	0.9mm	Surface mount technology	0.55mm	0.65mm	0.75mm	6	○	150Cel	2	N ch	250mA	350mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KDW-AU_R1_000A1	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-363	2.05mm	1.25mm	0.9mm	Surface mount technology	0.55mm	0.65mm	0.75mm	6	○	150Cel	2	N ch	250mA	350mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KDW_R1_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-363	2.05mm	1.25mm	0.9mm	Surface mount technology	0.55mm	0.65mm	0.75mm	6	-	150Cel	2	N ch	115mA	200mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KDW_R2_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-363	2.05mm	1.25mm	0.9mm	Surface mount technology	0.55mm	0.65mm	0.75mm	6	-	150Cel	2	N ch	115mA	200mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KTB	PAN JIT INTERNATIONAL	MOS FETS	60 V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-523	1.6mm	1.2mm	0.55mm	Surface mount technology	0.45mm	0.5mm	0.55mm	3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KTB_R1_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-523	1.6mm	1.2mm	0.55mm	Surface mount technology	0.45mm	0.5mm	0.55mm	3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KW	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-323	2mm	1.25mm	0.95mm	Surface mount technology	0.6mm	0.65mm	0.7mm	3	-	150Cel	1	N ch	0.115A	0.2W	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KW-AU	PAN JIT INTERNATIONAL	MOS FETS	60 V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-323	2mm	1.25mm	0.95mm	Surface mount technology	0.6mm	0.65mm	0.7mm	3	○	150Cel	1	N ch	250mA	350mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KW-AU_R1_000A1	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-323	2mm	1.25mm		Surface mount technology	0.6mm	0.65mm	0.7mm	3	○	150Cel	1	N ch	250mA	350mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KW_R1_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-323	2mm	1.25mm		Surface mount technology	0.6mm	0.65mm	0.7mm	3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002KW_R2_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET-ESD Protected	Mass production	SOT-323	2mm	1.25mm		Surface mount technology	0.6mm	0.65mm	0.7mm	3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002K_R2_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET - ESD Protected	Mass production	SOT-23	2.92mm	1.3mm	0.95mm	Surface mount technology	0.9mm	0.95mm	1mm	3	-	150Cel	1	N ch	300mA	350mW	1V	2.5V	60V	1microA		3Ohm	10V		4Ohm	4.5V
2N7002TB_R1_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET	New design not recommended	SOT-523	1.6mm	1.2mm	0.55mm	Surface mount technology	0.45mm	0.5mm	0.55mm	3	-	150Cel	1	N ch	115mA	150mW	1V	2.5V	60V	1microA		5Ohm	10V		7.5Ohm	4.5V
2N7002W_R1_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET	New design not recommended	SOT-323	2mm	1.25mm		Surface mount technology	0.6mm	0.65mm	0.7mm	3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA		5Ohm	10V		7.5Ohm	4.5V
2N7002W_R2_00001	PAN JIT INTERNATIONAL	MOS FETS	60V N-Channel Enhancement Mode MOSFET	New design not recommended	SOT-323	2mm	1.25mm		Surface mount technology	0.6mm	0.65mm	0.7mm	3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA		5Ohm	10V		7.5Ohm	4.5V
BSS123	PAN JIT INTERNATIONAL	MOS FETS	100V N-Channel Enhancement Mode MOSFET - ESD Protected	Mass production	SOT-23-3L	2.92mm	1.3mm	0.95mm	Surface mount technology	0.9mm	0.95mm	1mm	3	-	150Cel	1	N ch	170mA	500mW	1V	2.5V	100V	1microA	4Ohm	6Ohm	10V	4.5Ohm	10Ohm	4.5V