Discrete > TRANSISTORS > BIPOLAR TRANSISTORS > GENERAL PURPOSE BIPOLAR TRANSISTORS (1)
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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Junction temperature[Max] (Cel)
Number of transistors[Nom]
Number of NPN transistors[Nom]
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
DC current gain[Min]
Collector-emitter saturation voltage 1[Max] (V)
Collector-emitter saturation voltage 2[Max] (V)
Collector-emitter voltage[Max] (V)
TR polarity
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Manufecturer =
PAN JIT INTERNATIONAL

Purchase Number of records to be displayed:
PAN JIT INTERNATIONAL
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN Darlington Transistor Mass production TO-92S 4.2mm 3.25mm 4.58mm PCB insertion 1.12mm 1.27mm 1.42mm 3 - 150Cel 1 1 0.5A 625mW 10000 1200mV 10mA 1500V 0.1A 80V NPN