Product lifecycle stage
Advance preparation
Mass production
Package type
D2PAK
DFN2X2-6L
DFN2X5-6L
DFN2x5-6L
DFN3X2-8L
DFN3X3-8L
DFN3x2-8L
DFN3x3-8L
DPAK
SC-89
SOP-8
SOT-223
SOT-23
SOT-363
SOT-523
SOT23
SOT23-3
SOT23-6
TO-220
TO-220F
TO-247
TO-251/IPAK
TO-252/DPAK
TO-252E-2-M
TO-262
TO-263
TO-263/D2PAK
TSOP-6
TSSOP-8
Body length[Typ]
1.6m
2m
2.9m
2.92m
3m
4.4m
4.9m
5m
6.3m
6.5m
6.6m
9.97m
10m
10.16m
10.2m
15.8m
Body breadth[Typ]
0.8m
0.85m
1.25m
1.3m
1.6m
2m
2.3m
2.8m
3m
3.5m
3.9m
4.45m
4.5m
4.55m
4.57m
4.7m
5m
5.85m
6.1m
8.89m
8.995m
9.15m
Body height[Typ]
0.7m
0.725m
0.73m
0.75m
0.8m
0.9m
0.975m
1m
1.1m
1.15m
1.38m
1.5m
1.6m
2.3m
4.445m
4.5m
7.05m
7.175m
7.2m
9.97m
15.17m
15.4m
15.5m
15.6m
15.7m
15.87m
21m
Mounting method
PCB insertion
Surface mount technology
Pin Pitch[Min]
2.186m
2.2m
2.23m
2.24m
2.4m
2.42m
2.44m
Pin Pitch[Typ]
0.5m
0.65m
0.95m
1.27m
2.28m
2.286m
2.29m
2.3m
2.54m
2.55m
5.44m
Pin Pitch[Max]
2.33m
2.34m
2.386m
2.4m
2.54m
2.64m
2.66m
2.7m
Number of terminals[Nom]
3
6
8
Channel temperature[Max] (Cel)
150
175
520
Number of transistors[Nom]
1
2
Constructing devices
セパレート
ドレインコモン
Channel type
N ch
P ch
P+N ch
Drain current (DC)[Max] (A)
-85
-26
-25
-20
-15
-12
-10
-8
-7.9
-7
-6.6
-6
-5.4
-5.3
-5
-4.5
-4.3
-4.2
-4.1
-4
-3.4
-3.3
-3
-2.8
-0.13
0.1
0.115
0.22
0.238
0.3
2
2.4
2.7
3
3.5
4
4.2
4.5
4.8
5
5.2
5.5
5.8
6
6.3
6.5
6.9
7
8
8.2
8.5
9
10
11
11.6
12
13
15
18
20
30
38
45
50
55
56
60
64
65
75
79
80
84
90
100
110
120
130
140
145
160
170
180
200
220
Allowable power dissipation[Max] (W)
0.2
0.23
0.3
0.38
0.43
0.63
0.9
1
1.1
1.2
1.25
1.3
1.38
1.4
1.5
1.6
1.7
1.9
2
2.1
2.2
2.4
2.5
2.8
3
3.1
3.2
3.3
5
8.8
12
20
23
24
28
31
31.2
32
32.8
33
34
34.7
35
38
39
41
41.7
42
45
48
50
51
52
54
59
60
71
75
77
80
83
90
91
100
104
108
114
115
125
130
143
144
145
150
153
156
162
163
166
170
178
180
181
187
190
200
205
208
220
227
230
241
250
258
272
273
300
312
330
370
375
Gate-source threshold voltage[Min] (V)
-1.7
-1.5
-1.4
-1.2
-1
-0.8
-0.7
-0.6
-0.55
-0.5
-0.45
-0.4
-0.3
0.4
0.5
0.6
0.65
0.7
0.8
1
1.2
1.3
1.5
2
2.5
Gate-source threshold voltage[Max] (V)
-3.5
-3
-2.7
-2.5
-2.4
-2.1
-2
-1.5
-1.3
-1.2
-1
-0.95
1
1.2
1.3
1.4
1.5
1.8
2
2.5
3
3.5
4
Drain-source voltage[Max] (V)
-60
-50
-40
-30
-20
-12
18
20
25
30
35
40
45
50
55
60
68
75
100
110
120
150
200
400
500
600
650
700
735
800
Drain-source current[Max] (A)
-1 micro
500 n
1 micro
2 micro
10 micro
20 micro
Drain-source on-resistance @10V[Typ] (Ohm)
2.4 m
2.6 m
2.7 m
2.87 m
3 m
3.2 m
3.3 m
3.4 m
3.7 m
3.8 m
3.9 m
4 m
4.1 m
4.4 m
4.5 m
4.7 m
4.8 m
5 m
5.5 m
5.6 m
6 m
6.25 m
6.3 m
6.5 m
6.7 m
6.8 m
7.2 m
7.3 m
7.4 m
8 m
8.3 m
9 m
9.3 m
9.5 m
9.8 m
0.01
0.0106
0.011
0.012
0.0138
0.014
0.016
0.0164
0.019
0.02
0.0205
0.022
0.0225
0.023
0.024
0.025
0.026
0.028
0.03
0.031
0.034
0.037
0.039
0.041
0.042
0.044
0.045
0.046
0.06
0.064
0.065
0.067
0.07
0.072
0.08
0.13
0.135
0.14
0.15
0.17
0.2
0.22
0.3
0.32
0.36
0.41
0.45
0.54
0.55
0.56
0.58
0.6
0.69
0.74
0.8
0.85
0.9
0.95
1
1.1
1.2
1.23
1.26
1.3
1.32
1.38
1.5
1.6
1.85
1.9
2
2.1
2.2
3.5
3.6
3.7
3.8
3.9
Drain-source on-resistance @10V[Max] (Ohm)
3.5 m
3.6 m
4 m
4.5 m
5 m
5.5 m
6 m
7 m
7.4 m
7.5 m
8 m
9 m
0.01
0.0108
0.012
0.013
0.014
0.015
0.016
0.017
0.018
0.0185
0.02
0.021
0.022
0.023
0.025
0.026
0.028
0.03
0.031
0.032
0.033
0.034
0.035
0.04
0.045
0.047
0.049
0.05
0.051
0.052
0.053
0.06
0.08
0.09
0.092
0.1
0.15
0.165
0.19
0.2
0.3
0.35
0.38
0.41
0.5
0.52
0.65
0.7
0.75
0.8
0.83
1
1.1
1.15
1.2
1.25
1.4
1.5
1.55
1.6
2
2.1
2.4
2.5
2.7
3
3.5
4
4.2
4.7
4.8
7
7.5
Gate-source voltage at R_DS(on)_@10V[Typ] (V)
-10
10
Drain-source on-resistance @4.5Vor4V[Typ] (Ohm)
3.2 m
4.8 m
4.9 m
5 m
6.4 m
7.5 m
9.5 m
0.01
0.0104
0.0115
0.013
0.0133
0.014
0.0141
0.0144
0.0152
0.0165
0.017
0.018
0.0185
0.019
0.02
0.021
0.0225
0.023
0.024
0.025
0.026
0.0265
0.027
0.028
0.029
0.031
0.0324
0.034
0.0345
0.035
0.037
0.038
0.04
0.041
0.042
0.045
0.046
0.049
0.05
0.051
0.053
0.054
0.055
0.06
0.062
0.065
0.067
0.07
0.073
0.08
0.1
1.5
5
Drain-source on-resistance @4.5Vor4V[Max] (Ohm)
5 m
6 m
8.5 m
9.5 m
0.01
0.0125
0.013
0.014
0.016
0.017
0.02
0.021
0.022
0.023
0.024
0.025
0.028
0.03
0.033
0.035
0.0355
0.036
0.04
0.042
0.043
0.044
0.045
0.048
0.05
0.051
0.055
0.058
0.06
0.064
0.065
0.07
0.075
0.085
0.087
0.089
0.09
0.1
0.12
0.14
3
6
8
55
Gate-source voltage at R_DS(on)_@4.5Vor4V[Typ] (V)
-4.5
4
4.5
Drain-source on-resistance @2.5V[Typ] (Ohm)
0.0132
0.0189
0.0208
0.021
0.022
0.023
0.024
0.025
0.03
0.0311
0.032
0.033
0.035
0.036
0.037
0.045
0.05
0.056
0.064
0.065
0.067
0.068
0.07
0.072
0.08
0.083
0.085
0.088
0.091
0.099
0.11
2.2
7
Drain-source on-resistance @2.5V[Max] (Ohm)
0.0185
0.021
0.026
0.028
0.03
0.032
0.035
0.038
0.039
0.04
0.044
0.045
0.048
0.05
0.052
0.054
0.06
0.07
0.072
0.075
0.08
0.085
0.1
0.11
0.114
0.115
0.12
0.15
3.5
13
Gate-source voltage at R_DS(on)_@2.5V[Typ] (V)
-2.5
2.5
Drain-source on-resistance 1[Typ] (Ohm)
4.1 m
5.1 m
5.8 m
7.6 m
0.0108
0.0149
0.0159
0.016
0.017
0.018
0.019
0.026
0.0264
0.036
0.0449
0.05
0.056
0.076
0.082
0.11
0.133
2.9
Drain-source on-resistance 1[Max] (Ohm)
6 m
7 m
0.011
0.012
0.02
0.022
0.023
0.024
0.034
0.038
0.05
0.073
0.09
0.098
0.115
0.16
0.18
3
3.5
7.5
Gate-source voltage 1 at R_DS(on)_1[Typ] (V)
-20
-2.7
-2
-1.8
1.8
3.5
4
4.5
5
8
10
Drain-source on-resistance 2[Typ] (Ohm)
3.9 m
0.0176
0.019
0.02
0.021
0.0217
Drain-source on-resistance 2[Max] (Ohm)
0.024
0.026
0.028
0.03
Gate-source voltage 2 at R_DS(on)_2[Typ] (V)
3.1
3.6
10
