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GALLIUM ARSENIDE FETS

IC > GALLIUM ARSENIDE DEVICES > GALLIUM ARSENIDE FETS (1)

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1220

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1220

Manufecturer =

Nexperia

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Select	Part number	Manufecturer	Technical file	EDA/CAD	Product's class name	Product name	Product lifecycle stage	Package type	Body length[Typ]	Body breadth[Typ]	Body height[Typ]	Mounting method	Pin Pitch[Typ]	Number of terminals[Nom]	AEC compliant	Drain-source voltage[Max]	Saturation drain current[Typ]	Saturation drain current[Max]	Thermal resistance[Max]
	GAN063-650WSA	Nexperia			GALLIUM ARSENIDE FETS	650 V, 50 mOhm Gallium Nitride (GaN) FET	Mass production	TO-247/SOT429	15.9mm	5.029mm	20.955mm	PCB insertion	5.436mm	3	-	650V	2microA	25microA	40Cel/W

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