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FIELD EFFECT TRANSISTORS

Discrete > TRANSISTORS > FIELD EFFECT TRANSISTORS (8)
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    MOS FETS (8)
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MOS FETS P-Channel Enhancement-Mode MOSFET (-20 V, -2.2 A) Advance preparation SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 150Cel 1 P ch
HI-SINCERITY MICROELECTRONICS
MOS FETS N-Channel Enhancement-Mode MOSFET (20 V, 2.4 A) Advance preparation SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 150Cel 1 N ch
HI-SINCERITY MICROELECTRONICS
MOS FETS P-Channel Enhancement-Mode MOSFET (-20 V, -4.5 A) Mass production SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 150Cel 1 P ch
HI-SINCERITY MICROELECTRONICS
MOS FETS N-CHANNEL TRANSISTOR Mass production SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 150Cel 1 N ch
HI-SINCERITY MICROELECTRONICS
MOS FETS N-Channel Transistor Mass production SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 1 N ch
HI-SINCERITY MICROELECTRONICS
MOS FETS N-Channel Transistor Mass production SOT-323 2mm 1.25mm 0.9mm Surface mount technology 0.6mm 0.65mm 0.7mm 3 - 1 N ch
HI-SINCERITY MICROELECTRONICS
MOS FETS N-Channel MOSFET (60V, 0.2A) Mass production SOT-323 2mm 1.25mm 0.9mm Surface mount technology 0.6mm 0.65mm 0.7mm 3 - 1 N ch
HI-SINCERITY MICROELECTRONICS
MOS FETS Mass production SOT-363 Surface mount technology - N ch