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MOS FETS

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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Channel temperature[Max] (Cel)
Number of transistors[Nom]
Channel type
Drain current (DC)[Max] (A)
Allowable power dissipation[Max] (W)
Gate-source threshold voltage[Min] (V)
Gate-source threshold voltage[Max] (V)
Drain-source voltage[Max] (V)
Drain-source current[Max] (A)
Drain-source on-resistance @10V[Typ] (Ohm)
Drain-source on-resistance @10V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@10V[Typ] (V)
Drain-source on-resistance @4.5Vor4V[Typ] (Ohm)
Drain-source on-resistance @4.5Vor4V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@4.5Vor4V[Typ] (V)
Drain-source on-resistance @2.5V[Typ] (Ohm)
Drain-source on-resistance @2.5V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@2.5V[Typ] (V)
Drain-source on-resistance 1[Typ] (Ohm)
Drain-source on-resistance 1[Max] (Ohm)
Gate-source voltage 1 at R_DS(on)_1[Typ] (V)
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HI-SINCERITY MICROELECTRONICS

Purchase Number of records to be displayed:
HI-SINCERITY MICROELECTRONICS
MOS FETS P-Channel Enhancement-Mode MOSFET (-20 V, -2.2 A) Advance preparation SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 150Cel 1 P ch -2.2A 0.9W -0.45V -0.95V -20V -1microA 69mOhm 100mOhm -4.5V 83mOhm 150mOhm -2.5V
HI-SINCERITY MICROELECTRONICS
MOS FETS N-Channel Enhancement-Mode MOSFET (20 V, 2.4 A) Advance preparation SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 150Cel 1 N ch 2.4A 0.9W 0.65V 1.2V 20V 1microA 45mOhm 60mOhm 4.5V 70mOhm 115mOhm 2.5V
HI-SINCERITY MICROELECTRONICS
MOS FETS P-Channel Enhancement-Mode MOSFET (-20 V, -4.5 A) Mass production SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 150Cel 1 P ch -4.5A 1.38W -0.45V -20V -1microA 58mOhm -4.5V 71mOhm -2.5V
HI-SINCERITY MICROELECTRONICS
MOS FETS N-CHANNEL TRANSISTOR Mass production SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 150Cel 1 N ch 200mA 200mW 1V 2V 60V 1microA 5Ohm 10V 5.3Ohm 4.5V 5Ohm 5V
HI-SINCERITY MICROELECTRONICS
MOS FETS N-Channel Transistor Mass production SOT-23 2.92mm 1.4mm 1.095mm Surface mount technology 0.85mm 1mm 1.15mm 3 - 1 N ch 0.2A 0.2W 1V 2V 450V 50microA 5Ohm 10V 5Ohm 5V
HI-SINCERITY MICROELECTRONICS
MOS FETS N-Channel Transistor Mass production SOT-323 2mm 1.25mm 0.9mm Surface mount technology 0.6mm 0.65mm 0.7mm 3 - 1 N ch 0.2A 1V 2V 50microA 5Ohm 10V 5.3Ohm 4.5V 5Ohm 5V
HI-SINCERITY MICROELECTRONICS
MOS FETS N-Channel MOSFET (60V, 0.2A) Mass production SOT-323 2mm 1.25mm 0.9mm Surface mount technology 0.6mm 0.65mm 0.7mm 3 - 1 N ch 0.2A 0.2W 1V 2.5V 50microA 2.3Ohm 5Ohm 10V 3.3Ohm 5.3Ohm 4.5V 2.8Ohm 5Ohm 5V
HI-SINCERITY MICROELECTRONICS
MOS FETS Mass production SOT-363 Surface mount technology - N ch 0.2A 20V 1microA