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ON Semiconductor

Part number	Manufecturer	Product's class name	Product name	Product lifecycle stage	Package type	Body length[Typ]	Body breadth[Typ]	Body height[Typ]	Mounting method	Pin Pitch[Min]	Pin Pitch[Typ]	Pin Pitch[Max]	Number of terminals[Nom]	AEC compliant	Channel temperature[Max]	Number of transistors[Nom]	Channel type	Drain current (DC)[Max]	Allowable power dissipation[Max]	Gate-source threshold voltage[Min]	Gate-source threshold voltage[Max]	Drain-source voltage[Max]	Drain-source current[Max]	Drain-source on-resistance @10V[Typ]	Drain-source on-resistance @10V[Max]	Gate-source voltage at R_DS(on)_@10V[Typ]	Drain-source on-resistance @4.5Vor4V[Typ]	Drain-source on-resistance @4.5Vor4V[Max]	Gate-source voltage at R_DS(on)_@4.5Vor4V[Typ]	Drain-source on-resistance 1[Typ]	Drain-source on-resistance 1[Max]	Gate-source voltage 1 at R_DS(on)_1[Typ]
1HN04CH-TL-W	ON Semiconductor	MOS FETS	Power MOSFET, 100 V, 8 Ohm, 270 mA, Single N-Channel	Mass production	CPH3/SC-59/SOT-23/TO-236	2.9mm	1.6mm	0.9mm	Surface mount technology		0.95mm		3	-	150Cel	1	N ch	270mA	0.6W	1.2V	2.6V	100V	1microA	6Ohm	8Ohm	10V	6.8Ohm	9.8Ohm	4V
1HP04CH-TL-W	ON Semiconductor	MOS FETS	Small Signal MOSFET -100V, 18ohm, -170mA, Single P-Channel	Mass production	CPH3/SC-59/SOT-23/TO-236	2.9mm	1.6mm	0.9mm	Surface mount technology		0.95mm		3	-	150Cel	1	P ch	-170mA	0.6W	-1.2V	-2.6V	-100V	-1microA	12.5Ohm	18Ohm	-10V	14Ohm	21Ohm	-4V
2N7000	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92-3L/135AN	4.76mm	3.62mm	4.825mm	PCB insertion		1.27mm		3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7000-D26Z	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92-3L/135AR	4.76mm	3.62mm	4.825mm	PCB insertion	2.4mm	2.6mm	2.8mm	3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7000-D74Z	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92-3L/135AR	4.76mm	3.62mm	4.825mm	PCB insertion	2.4mm	2.6mm	2.8mm	3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7000-D75Z	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	TO-92-3L/135AR	4.76mm	3.62mm	4.825mm	PCB insertion	2.4mm	2.6mm	2.8mm	3	-	150Cel	1	N ch	200mA	400mW	0.8V	3V	60V	1microA	1.2Ohm	5Ohm	10V	1.8Ohm	5.3Ohm	4.5V
2N7002	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	115mA	200mW	1V	2.5V	60V	1microA	1.2Ohm	7.5Ohm	10V				1.7Ohm	7.5Ohm	5V
2N7002DW	ON Semiconductor	MOS FETS	Field Effect Transistor N-Channel Enhancement Mode	Mass production	SC-88-6/SC-70-6/SOT-363-6	2mm	1.25mm	0.9mm	Surface mount technology		0.65mm		6	-	150Cel	2	N ch	115mA	200mW	1V	2V	60V	1microA		2Ohm	10V				1.6Ohm	7.5Ohm	5V
2N7002ET1G	ON Semiconductor	MOS FETS	Small Signal MOSFET Single N-Channel, 60 V 310 mA 2.5 ohm	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	260mA	300mW	1V	2.5V	60V	1microA	0.86Ohm	2.5Ohm	10V	1.1Ohm	3Ohm	4.5V
2N7002ET7G	ON Semiconductor	MOS FETS	Small Signal MOSFET Single N-Channel, 60 V, 310 mA, 2.5 Ohm	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	260mA	300mW	1V	2.5V	60V	1microA	0.86Ohm	2.5Ohm	10V	1.1Ohm	3Ohm	4.5V
2N7002K	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	SOT-23 3L	2.92mm	1.3mm		Surface mount technology		0.95mm		3	-	150Cel	1	N ch	300mA	350mW	1V	2.5V	60V	1microA		2Ohm	10V		4Ohm	4.5V
2N7002KT1G	ON Semiconductor	MOS FETS	Small Signal MOSFET 60 V, 380 mA, Single, N-Channel, SOT-23	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	380mA	300mW	1V	2.3V	60V	1microA	1.19Ohm	1.6Ohm	10V	1.33Ohm	2.5Ohm	4.5V
2N7002KT7G	ON Semiconductor	MOS FETS	Small Signal MOSFET Single N-Channel, 60 V, 380 mA, 1.6 Ohm, SOT-23	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	380mA	300mW	1V	2.3V	60V	1microA	1.19Ohm	1.6Ohm	10V	1.33Ohm	2.5Ohm	4.5V
2N7002KW	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	SC-70	2mm	1.25mm	0.9mm	Surface mount technology		0.65mm		3	-	150Cel	1	N ch	310mA	300mW	1.1V	2.1V	60V	1microA		1.6Ohm	10V					2Ohm	5V
2N7002LT1G	ON Semiconductor	MOS FETS	N-Channel, Small Signal, SOT-23 60 V, 115 mA	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	115mA	225mW	1V	2.5V	60V	1microA		7.5Ohm	10V					7.5Ohm	5V
2N7002LT1H	ON Semiconductor	MOS FETS	N-Channel, Small Signal, SOT-23 60 V, 115 mA	New design not recommended	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	115mA	225mW	1V	2.5V	60V	1microA		7.5Ohm	10V					7.5Ohm	5V
2N7002LT3G	ON Semiconductor	MOS FETS	N-Channel, Small Signal, SOT-23 60 V, 115 mA	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	115mA	225mW	1V	2.5V	60V	1microA		7.5Ohm	10V					7.5Ohm	5V
2N7002LT7G	ON Semiconductor	MOS FETS	MOSFET-N-Channel Small Signal, SOT-23 60 V, 115 mA	Mass production	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	115mA	225mW	1V	2.5V	60V	1microA		7.5Ohm	10V					7.5Ohm	5V
2N7002LT7H	ON Semiconductor	MOS FETS	MOSFET-N-Channel Small Signal, SOT-23 60 V, 115 mA	New design not recommended	SOT-23/TO-236	2.9mm	1.3mm	0.94mm	Surface mount technology	0.89mm	0.95mm	1.02mm	3	-	150Cel	1	N ch	115mA	225mW	1V	2.5V	60V	1microA		7.5Ohm	10V					7.5Ohm	5V
2N7002T	ON Semiconductor	MOS FETS	N-Channel Enhancement Mode Field Effect Transistor	Mass production	SOT-523F 3L	1.6mm	0.88mm	0.68mm	Surface mount technology		0.5mm		3	-	150Cel	1	N ch	115mA	200mW	1V	2V	60V	1microA		2Ohm	10V				1.6Ohm	7.5Ohm	5V