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IGBT MODULES

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Number of terminals[Nom]

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AEC compliant

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Gate-emitter leakage current[Typ] (A)

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Collector-emitter saturation voltage[Typ] (V)

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Gate-emitter voltage[Max] (V)

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Collector current (DC)[Max] (A)

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126

Manufecturer =

ON Semiconductor

Purchase Number of records to be displayed:

Select	Part number	Manufecturer	Technical file	EDA/CAD	Product's class name	Product name	Product lifecycle stage	Package type	Mounting method	Collector-emitter saturation voltage[Typ]	Collector current (DC)[Max]	Collector-emitter voltage[Max]	Rise time[Typ]	Rise time[Max]	Equivalent circuit	Thermal resistance (transistor stage)[Max]	Thermal resistance (diode stage)[Max]
	NGD18N40CLBT4	ON Semiconductor			IGBT MODULES	Ignition IGBT 18Amps,400Volts N-Channel DPAK	Mass production	DPAK	Surface mount technology	700microV	18A	4000nV	9000ns	15000ns	1in1with FRD	1.3Cel/W	95Cel/W

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Refer to recommended circuit diagram

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