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MULTI CHIP DISCRETE DEVICES

Discrete > MULTI CHIP DISCRETE DEVICES (13)
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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Typ]
Number of terminals[Nom]
AEC compliant
Drain-source voltage[Max] (V)
Drain current (DC)[Max] (A)
Drain current (pulse)[Max] (A)
Gate-source cutoff voltage[Min] (V)
Gate-source cutoff voltage[Max] (V)
Drain-source on-resistance[Typ] (Ohm)
Drain-source on-resistance[Max] (Ohm)
Applied filter
Manufecturer =
ON Semiconductor

Purchase Number of records to be displayed:
ON Semiconductor
MULTI CHIP DISCRETE DEVICES 30 V, 52 m ohm, 3.5 A, Single N-Channel with Schottky Diode Power MOSFET Mass production CPH5/SC-74A/SOT-25 2.9mm 1.6mm 0.9mm Surface mount technology 0.95mm 5 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES 30 V, 52 m ohm, 3.5 A, Single N-Channel with Schottky Diode Power MOSFET Mass production CPH5/SC-74A/SOT-25 2.9mm 1.6mm 0.9mm Surface mount technology 0.95mm 5 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES -20 V, 85 m ohm, -3 A, Single EMH8 with Schottky Diode P-Channel Power MOSFET Mass production EMH8 Surface mount technology 0.5mm 8 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES -20 V, 266 m ohm, -1.5 A, Single P-Channel with Schottky Diode Power MOSFET Mass production SC-88AFL/MCPH5 2mm 1.6mm Surface mount technology 0.65mm 5 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES MOSFET-Power, Single, P-Channel, Schottky Diodes, ChipFET, Schottky Barrier -20V, -3.0 A, 3.0A Mass production ChipFET 3.05mm 1.65mm 1.05mm Surface mount technology 0.65mm 8 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, uCool Package Power MOSFET Mass production WDFN6 2mm 2mm Surface mount technology 0.65mm 6 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES 30 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm WDFN Package Power MOSFET Mass production WDFN6 2mm 2mm Surface mount technology 0.65mm 6 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES 30 V, N-Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm uCool Package Power MOSFET Mass production WDFN6 1.6mm 1.6mm Surface mount technology 0.5mm 6 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES 30 V, N-Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm uCool Package Power MOSFET Mass production WDFN6 1.6mm 1.6mm Surface mount technology 0.5mm 6 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Power MOSFET and Schottky Diode Mass production SOIC-8 Surface mount technology 1.27mm 8 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES 30 V, 1.6 A, 180 m ohm, Single SCH6 with Schottky Diode N-Channel Power MOSFET Mass production SCH6/SOT-563 Surface mount technology 0.5mm 6 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES Power MOSFET -20 V, 266 m ohm, -1.5 A, Single P-Channel with Schottky Diode Power MOSFET Discontinued products SC-88AFL/MCPH5 2mm 1.6mm 0.85mm Surface mount technology 0.65mm 5 -
ON Semiconductor
MULTI CHIP DISCRETE DEVICES MOSFET-Power, Single, P-Channel, Schottky Diodes, ChipFET, Schottky Barrier -20V, -3.0 A, 3.0A Discontinued products ChipFET 3.05mm 1.65mm 1.05mm Surface mount technology 0.65mm 8 -