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IGBT DISCRETE

Discrete > TRANSISTORS > IGBTS > IGBT DISCRETE (5)
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Product lifecycle stage
Package type
Mounting method
Pin Pitch[Typ]
Number of terminals[Nom]
AEC compliant
Number of transistors[Nom]
Gate-emitter leakage current[Max] (A)
Collector-emitter saturation voltage[Typ] (V)
Collector-emitter saturation voltage[Max] (V)
Gate-emitter voltage[Max] (V)
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
Collector-emitter cutoff current[Max] (A)
Collector-emitter voltage[Max] (V)
Gate-emitter threshold voltage[Min] (V)
Gate-emitter threshold voltage[Typ] (V)
Gate-emitter threshold voltage[Max] (V)
Input capacitance[Typ] (F)
Channel type
Applied filter
Manufecturer =
MagnaChip Semiconductor

Purchase Number of records to be displayed:
MagnaChip Semiconductor
IGBT DISCRETE 650V Field Stop IGBT Mass production TO-220F PCB insertion 2.54mm 3 - 1 1.65V 2V 30A 48W 650V 27ns 4.5V 5.5V 6.5V 1129pF N ch
MagnaChip Semiconductor
IGBT DISCRETE High speed Fieldstop Trench IGBT Mass production TO-247 PCB insertion 5.45mm 3 - 1 2V 2.4V 50A 348W 1200V 41ns 5V 6V 7V 3942pF N ch
MagnaChip Semiconductor
IGBT DISCRETE High speed FieldStop Trench IGBT Mass production TO-247 PCB insertion 5.45mm 3 - 1 2V 2.4V 80A 357W 1200V 55ns 4.5V 5.5V 6.5V 6030pF N ch
MagnaChip Semiconductor
IGBT DISCRETE 650V Field Stop IGBT Mass production TO-247 PCB insertion 5.45mm 3 - 1 1.85V 2.4V 100A 375W 650V 60ns 3.8V 5V 6.2V 4453pF N ch
MagnaChip Semiconductor
IGBT DISCRETE High Speed Fieldstop Trench IGBT Second Generation Mass production TO-247 PCB insertion 5.45mm 3 - 1 1.85V 2.4V 100A 428W 650V 54ns 4V 5V 6V 2327pF N ch