Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-23
2.9mm
1.3mm
0.975mm
Surface mount technology
0.95mm
3
-
150Cel
1
N ch
340mA
350mW
1V
2.5V
60V
1microA
1.2Ohm
2.5Ohm
10V
1.3Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-23
2.9mm
1.3mm
0.975mm
Surface mount technology
0.95mm
3
-
150Cel
1
N ch
340mA
350mW
1V
2.5V
60V
1microA
1.2Ohm
2.5Ohm
10V
1.3Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-363
2mm
1.25mm
0.95mm
Surface mount technology
0.65mm
6
-
150Cel
2
N ch
340mA
150mW
1V
2.5V
60V
1microA
1.2Ohm
2.5Ohm
10V
1.3Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-523
1.6mm
0.8mm
0.7mm
Surface mount technology
0.5mm
3
-
150Cel
1
N ch
0.3A
0.3W
1V
2.5V
60V
1microA
1Ohm
1.4Ohm
10V
1.15Ohm
1.6Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-23
2.9mm
1.3mm
0.975mm
Surface mount technology
0.95mm
3
-
150Cel
1
N ch
300mA
300mW
1V
2.5V
60V
1microA
1.9Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-363
2mm
1.25mm
0.95mm
Surface mount technology
0.65mm
6
-
150Cel
2
N ch
300mA
300mW
1V
2.5V
60V
1microA
1.9Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-523
1.6mm
0.8mm
0.7mm
Surface mount technology
0.5mm
3
-
150Cel
1
N ch
300mA
300mW
1V
2.5V
60V
1microA
1.9Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
DFN1006
1mm
0.6mm
0.46mm
Surface mount technology
0.35mm
3
-
150Cel
1
N ch
260mA
200mW
1V
2.5V
60V
1microA
1.9Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-723
1.2mm
0.8mm
0.465mm
Surface mount technology
0.4mm
3
-
150Cel
1
N ch
0.3A
0.34W
1V
2.5V
60V
1microA
1.8Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-323
2mm
1.25mm
0.95mm
Surface mount technology
0.65mm
3
-
150Cel
1
N ch
300mA
300mW
1V
2.5V
60V
1microA
1.9Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-323
2mm
1.25mm
0.95mm
Surface mount technology
0.65mm
3
○
150Cel
1
N ch
300mA
300mW
1V
2.5V
60V
1microA
1.9Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-563
1.6mm
1.2mm
0.6mm
Surface mount technology
0.4mm
0.5mm
0.6mm
6
-
150Cel
2
N ch
300mA
250mW
1V
2.5V
60V
1microA
1.9Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-363
2mm
1.25mm
0.95mm
Surface mount technology
0.65mm
6
○
150Cel
2
N ch
220mA
250mW
0.8V
2.4V
60V
1microA
1.1Ohm
2.5Ohm
10V
1.3Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-23
2.9mm
1.3mm
0.975mm
Surface mount technology
0.95mm
3
-
175Cel
1
N ch
300mA
520mW
1.1V
2.4V
60V
1microA
1.1Ohm
2Ohm
10V
1.3Ohm
2.5Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-323
2mm
1.25mm
0.95mm
Surface mount technology
0.65mm
3
○
175Cel
1
N ch
300mA
416mW
1.1V
2.4V
60V
1microA
1.1Ohm
2Ohm
10V
1.3Ohm
2.5Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-323
2mm
1.25mm
0.95mm
Surface mount technology
0.65mm
3
-
150Cel
1
N ch
340mA
150mW
1V
2.5V
60V
1microA
1.2Ohm
2.5Ohm
10V
1.3Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-323
2mm
1.25mm
0.95mm
Surface mount technology
0.65mm
3
-
150Cel
1
N ch
200mA
250mW
0.6V
1.6V
30V
1microA
1.7Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-523
1.6mm
0.8mm
0.7mm
Surface mount technology
0.5mm
3
-
150Cel
1
N ch
150mA
205mW
0.6V
1.5V
30V
1microA
1.7Ohm
2.5Ohm
10V
2Ohm
3Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-23
2.9mm
1.3mm
0.975mm
Surface mount technology
0.95mm
3
-
150Cel
1
N ch
200mA
350mW
1V
2.5V
100V
1microA
3Ohm
5Ohm
10V
3.5Ohm
5.5Ohm
4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS
N-Channel Enhancement Mode Field Effect Transistor
Mass production
SOT-523
1.6mm
0.8mm
0.7mm
Surface mount technology
0.5mm
3
-
150Cel
1
N ch
200mA
350mW
1V
2.5V
100V
1microA
2.6Ohm
3.4Ohm
10V
2.8Ohm
3.6Ohm
4.5V