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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Channel temperature[Max] (Cel)
Number of transistors[Nom]
Constructing devices
Channel type
Drain current (DC)[Max] (A)
Allowable power dissipation[Max] (W)
Gate-source threshold voltage[Min] (V)
Gate-source threshold voltage[Max] (V)
Drain-source voltage[Max] (V)
Drain-source current[Max] (A)
Drain-source on-resistance @10V[Typ] (Ohm)
Drain-source on-resistance @10V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@10V[Typ] (V)
Drain-source on-resistance @4.5Vor4V[Typ] (Ohm)
Drain-source on-resistance @4.5Vor4V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@4.5Vor4V[Typ] (V)
Drain-source on-resistance @2.5V[Typ] (Ohm)
Drain-source on-resistance @2.5V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@2.5V[Typ] (V)
Drain-source on-resistance 1[Typ] (Ohm)
Drain-source on-resistance 1[Max] (Ohm)
Gate-source voltage 1 at R_DS(on)_1[Typ] (V)
Drain-source on-resistance 2[Typ] (Ohm)
Drain-source on-resistance 2[Max] (Ohm)
Gate-source voltage 2 at R_DS(on)_2[Typ] (V)
Applied filter
Manufecturer =
Yangzhou Yangjie Electronic Technology

Purchase Number of records to be displayed:
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch 340mA 350mW 1V 2.5V 60V 1microA 1.2Ohm 2.5Ohm 10V 1.3Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch 340mA 350mW 1V 2.5V 60V 1microA 1.2Ohm 2.5Ohm 10V 1.3Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-363 2mm 1.25mm 0.95mm Surface mount technology 0.65mm 6 - 150Cel 2 N ch 340mA 150mW 1V 2.5V 60V 1microA 1.2Ohm 2.5Ohm 10V 1.3Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-523 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 N ch 0.3A 0.3W 1V 2.5V 60V 1microA 1Ohm 1.4Ohm 10V 1.15Ohm 1.6Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch 300mA 300mW 1V 2.5V 60V 1microA 1.9Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-363 2mm 1.25mm 0.95mm Surface mount technology 0.65mm 6 - 150Cel 2 N ch 300mA 300mW 1V 2.5V 60V 1microA 1.9Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-523 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 N ch 300mA 300mW 1V 2.5V 60V 1microA 1.9Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production DFN1006 1mm 0.6mm 0.46mm Surface mount technology 0.35mm 3 - 150Cel 1 N ch 260mA 200mW 1V 2.5V 60V 1microA 1.9Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-723 1.2mm 0.8mm 0.465mm Surface mount technology 0.4mm 3 - 150Cel 1 N ch 0.3A 0.34W 1V 2.5V 60V 1microA 1.8Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-323 2mm 1.25mm 0.95mm Surface mount technology 0.65mm 3 - 150Cel 1 N ch 300mA 300mW 1V 2.5V 60V 1microA 1.9Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-323 2mm 1.25mm 0.95mm Surface mount technology 0.65mm 3 150Cel 1 N ch 300mA 300mW 1V 2.5V 60V 1microA 1.9Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-563 1.6mm 1.2mm 0.6mm Surface mount technology 0.4mm 0.5mm 0.6mm 6 - 150Cel 2 N ch 300mA 250mW 1V 2.5V 60V 1microA 1.9Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-363 2mm 1.25mm 0.95mm Surface mount technology 0.65mm 6 150Cel 2 N ch 220mA 250mW 0.8V 2.4V 60V 1microA 1.1Ohm 2.5Ohm 10V 1.3Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 175Cel 1 N ch 300mA 520mW 1.1V 2.4V 60V 1microA 1.1Ohm 2Ohm 10V 1.3Ohm 2.5Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-323 2mm 1.25mm 0.95mm Surface mount technology 0.65mm 3 175Cel 1 N ch 300mA 416mW 1.1V 2.4V 60V 1microA 1.1Ohm 2Ohm 10V 1.3Ohm 2.5Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-323 2mm 1.25mm 0.95mm Surface mount technology 0.65mm 3 - 150Cel 1 N ch 340mA 150mW 1V 2.5V 60V 1microA 1.2Ohm 2.5Ohm 10V 1.3Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-323 2mm 1.25mm 0.95mm Surface mount technology 0.65mm 3 - 150Cel 1 N ch 200mA 250mW 0.6V 1.6V 30V 1microA 1.7Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-523 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 N ch 150mA 205mW 0.6V 1.5V 30V 1microA 1.7Ohm 2.5Ohm 10V 2Ohm 3Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-23 2.9mm 1.3mm 0.975mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch 200mA 350mW 1V 2.5V 100V 1microA 3Ohm 5Ohm 10V 3.5Ohm 5.5Ohm 4.5V
Yangzhou Yangjie Electronic Technology
MOS FETS N-Channel Enhancement Mode Field Effect Transistor Mass production SOT-523 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 N ch 200mA 350mW 1V 2.5V 100V 1microA 2.6Ohm 3.4Ohm 10V 2.8Ohm 3.6Ohm 4.5V