Home » IC » MEMORIES » MEMORY MODULES

MEMORY MODULES

IC > MEMORIES > MEMORY MODULES (1,025)
Members only

NEXTY trading products -> You can search for components that Nexty Electronics has used in the consumer and automotive fields.
Prioritize NEXTY support -> Manufacturers that have a business area near your company will appear at the top of the search results.
For parts with NEXTY support, you will be able to make technical inquiries about the parts.

NEXTY sales results
Family or series name
Product lifecycle stage
Package type
Mounting method
Memory capacity (bit)[Nom] (bit)
Storage size[Nom] (word)
Word size[Nom] (bit)
Operating ambient temperature[Min] (Cel)
Operating ambient temperature[Max] (Cel)
Supply voltage[Min] (V)
Supply voltage[Typ] (V)
Supply voltage[Max] (V)
Cycle time[Max] (Hz)
Access time[Max] (s)
Outline
Number of connector pins[Nom]
Memory type
Applied filter
Manufecturer =
SAMSUNG

Purchase Number of records to be displayed:
SAMSUNG
MEMORY MODULES 1Mx18-bit QDRTM SRAM K7Q161862B Mass production 165FBGA 18Mbit 1Mword 18bit 0Cel 70Cel 1.7V 2.5V 2.6V 166MHz 2.5ns
SAMSUNG
MEMORY MODULES 1Mx18-bit QDRTM SRAM K7Q161864B Mass production 165FBGA 18Mbit 1Mword 18bit 0Cel 70Cel 1.7V 2.5V 2.6V 166MHz 2.5ns
SAMSUNG
MEMORY MODULES 512Kx36-bit QDRTM SRAM K7Q163662B Mass production 165FBGA 18Mbit 512kword 36bit 0Cel 70Cel 1.7V 2.5V 2.6V 166MHz 2.5ns
SAMSUNG
MEMORY MODULES 512Kx36-bit QDRTM SRAM K7Q163664B Mass production 165FBGA 18Mbit 512kword 36bit 0Cel 70Cel 1.7V 2.5V 2.6V 166MHz 2.5ns
SAMSUNG
MEMORY MODULES 128M x 8 Bits NAND Flash Memory K9T1G08U0M Mass production 48-WSOP1-1217F Surface mount technology 1024Mbit 128Mword 8bit 2.7V 3.3V 3.6V 15micros
SAMSUNG
MEMORY MODULES 128M x 8 Bits NAND Flash Memory K9T1G08U0M Mass production 48-WSOP1-1217F Surface mount technology 1024Mbit 128Mword 8bit 2.7V 3.3V 3.6V 15micros
SAMSUNG
MEMORY MODULES 128M x 8 Bits NAND Flash Memory K9T1G08U0M Mass production 48-TSOP1-1220F Surface mount technology 1024Mbit 128Mword 8bit 2.7V 3.3V 3.6V 15micros
SAMSUNG
MEMORY MODULES 128M x 8 Bits NAND Flash Memory K9T1G08U0M Mass production 48-TSOP1-1220F Surface mount technology 1024Mbit 128Mword 8bit 2.7V 3.3V 3.6V 15micros
SAMSUNG
MEMORY MODULES 128M x 8 Bits NAND Flash Memory K9T1G08U0M Mass production 48-WSOP1-1217F Surface mount technology 1024Mbit 128Mword 8bit 2.7V 3.3V 3.6V 15micros
SAMSUNG
MEMORY MODULES 128M x 8 Bits NAND Flash Memory K9T1G08U0M Mass production 48-WSOP1-1217F Surface mount technology 1024Mbit 128Mword 8bit 2.7V 3.3V 3.6V 15micros
SAMSUNG
MEMORY MODULES 128M x 8 Bits NAND Flash Memory K9T1G08U0M Mass production 48-TSOP1-1220F Surface mount technology 1024Mbit 128Mword 8bit 2.7V 3.3V 3.6V 15micros
SAMSUNG
MEMORY MODULES 128M x 8 Bits NAND Flash Memory K9T1G08U0M Mass production 48-TSOP1-1220F Surface mount technology 1024Mbit 128Mword 8bit 2.7V 3.3V 3.6V 15micros
SAMSUNG
MEMORY MODULES DDR SDRAM Registered Module 184pin Registered Module based on 128Mb F-die (x8) 1,700/1,200mil Height and 72-bit ECC M312L1713FTS Mass production 128Mbit 16Mword 8bit 2.3V 2.7V 133MHz SDRAM
SAMSUNG
MEMORY MODULES DDR SDRAM Registered Module 184pin Registered Module based on 128Mb F-die (x8) 1,700/1,200mil Height and 72-bit ECC M312L1713FTS Mass production 128Mbit 16Mword 8bit 2.3V 2.7V 100MHz SDRAM
SAMSUNG
MEMORY MODULES DDR SDRAM Registered Module 184pin Registered Module based on 128Mb F-die (x8) 1,700/1,200mil Height and 72-bit ECC M312L1713FTS Mass production 128Mbit 16Mword 8bit 2.3V 2.7V 133MHz SDRAM
SAMSUNG
MEMORY MODULES DDR SDRAM Registered Module 184pin Registered Module based on 128Mb F-die (x8) 1,700/1,200mil Height and 72-bit ECC M312L1713FTS Mass production 128Mbit 16Mword 8bit 2.3V 2.7V 133MHz SDRAM
SAMSUNG
MEMORY MODULES DDR SDRAM Registered Module 184pin Registered Module based on 128Mb F-die (x8) 1,700/1,200mil Height and 72-bit ECC M312L1713FTS Mass production 128Mbit 16Mword 8bit 2.3V 2.7V 100MHz SDRAM
SAMSUNG
MEMORY MODULES DDR SDRAM Registered Module 184pin Registered Module based on 128Mb F-die (x8) 1,700/1,200mil Height and 72-bit ECC M312L1713FTS Mass production 128Mbit 16Mword 8bit 2.3V 2.7V 133MHz SDRAM
SAMSUNG
MEMORY MODULES DDR SDRAM Registered Module 184pin Registered Module based on 256Mb E-die(x4) with 1,200mil Height AND 72-bit ECC M312L2820EG0 Mass production 60FBGA 1Gbit 64Mword 4bit 2.3V 2.5V 2.7V 133MHz 0.75ns DDR SDRAM
SAMSUNG
MEMORY MODULES DDR SDRAM Registered Module 184pin Registered Module based on 256Mb E-die(x4) with 1,200mil Height AND 72-bit ECC M312L2820EG0 Mass production 60FBGA 1Gbit 64Mword 4bit 2.3V 2.5V 2.7V 133MHz 0.75ns DDR SDRAM