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IGBT DISCRETE

Discrete > TRANSISTORS > IGBTS > IGBT DISCRETE (9)
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Product lifecycle stage
Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Number of transistors[Nom]
Gate-emitter leakage current[Max] (A)
Collector-emitter saturation voltage[Typ] (V)
Collector-emitter saturation voltage[Max] (V)
Gate-emitter voltage[Max] (V)
Collector-emitter cutoff current[Max] (A)
Collector-emitter voltage[Max] (V)
Gate-emitter threshold voltage[Max] (V)
Applied filter
Manufecturer =
SANYO Semiconductor

Purchase Number of records to be displayed:
SANYO Semiconductor
IGBT DISCRETE Mass production SOP8 Surface mount technology 4.2V 5.8V 1.2V
SANYO Semiconductor
IGBT DISCRETE Mass production TSSOP8 4.5mm 3mm 1mm Surface mount technology 1 3.7V 5.4V 1.2V
SANYO Semiconductor
IGBT DISCRETE Mass production TSSOP8 4.5mm 3mm 1mm Surface mount technology 1 3.7V 5.4V 1.2V
SANYO Semiconductor
IGBT DISCRETE Mass production TSSOP8 4.5mm 3mm 1mm Surface mount technology 1 3.4V 4.8V 400V
SANYO Semiconductor
IGBT DISCRETE Mass production TSSOP8 4.5mm 3mm 1mm Surface mount technology 1 3.7V 5.5V 400V
SANYO Semiconductor
IGBT DISCRETE Mass production ECH8 2.9mm 2.3mm Surface mount technology 1 4V 5.6V 400V 0.9V
SANYO Semiconductor
IGBT DISCRETE Discontinued products SOP8 Surface mount technology 4.2V 5.5V
SANYO Semiconductor
IGBT DISCRETE Discontinued products SOP8 Surface mount technology 4.2V 5.5V
SANYO Semiconductor
IGBT DISCRETE Discontinued products TSSOP8 Surface mount technology 4.2V 5.8V