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FIELD EFFECT TRANSISTORS

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    MOS FETS (1,643)
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Package type
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Body breadth[Typ]
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Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
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Manufecturer =
STMicroelectronics
Product lifecycle stage =
Development in progress
Scheduled to be discontinued
New design not recommended
Advance preparation
Mass production

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STMicroelectronics
MOS FETS RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFET Mass production PowerSO-10RF (formed lead) 9.4mm 7.5mm 3.5mm Surface mount technology 2 - 165Cel 1 N ch
STMicroelectronics
MOS FETS RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Mass production PowerSO-10RF (formed lead) 9.4mm 7.5mm 3.5mm Surface mount technology 2 - 1 N ch
STMicroelectronics
MOS FETS Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mohm (typ., TJ=150 degC), N-channel in a HiP247 Mass production Hip247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 - 200Cel 1 N ch
STMicroelectronics
MOS FETS Automotive-grade silicon carbide Power MOSFET 1700V, 6 mohm typ,43A in an HiP247 package Mass production HiP247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 ○ 200Cel 1 N ch
STMicroelectronics
MOS FETS Silicon carbide Power MOSFET 1200 V, 45 A, 90 mohm (typ., TJ = 150 degC) in an HiP247 package Mass production Hip247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 - 200Cel 1 N ch
STMicroelectronics
MOS FETS Silicon carbide Power MOSFET 1200 V, 65 A, 59 OHM (typ, TJ=150) in an HiP247 package Mass production HiP247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 - 1 N ch
STMicroelectronics
MOS FETS Automotive-grade silicon carbide Power MOSFET 650 V, 20 mohm typ., 95 A in an H2PAK-7 package Mass production H2PAK-7 10.2mm 4.55mm Surface mount technology 1.17mm 1.27mm 1.37mm 7 ○ 175Cel 1 N ch
STMicroelectronics
MOS FETS Automotive silicon carbide Power MOSFET 650 V, 45 A, 65 m ohm (typ., TJ = 175 Cel) in an H2PAK-7 package Mass production H2PAK-7 10.2mm 4.55mm Surface mount technology 1.17mm 1.27mm 1.37mm 7 - 175Cel 1 N ch
STMicroelectronics
MOS FETS Silicon carbide Power MOSFET 650 V, 90 A, 18 m ohm (typ., TJ = 25 Cel) in an H2PAK-7 package Mass production H2PAK-7 10.2mm 4.55mm Surface mount technology 1.17mm 1.27mm 1.37mm 7 - 175Cel 1 N ch
STMicroelectronics
MOS FETS Automotive-grade silicon carbide Power MOSFET 650 V, 20 mohm typ., 100 A in an HiP247 package Mass production HiP247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 ○ 200Cel 1 N ch
STMicroelectronics
MOS FETS Silicon carbide Power MOSFET 650 V, 55 mohm typ., 45 A in an HiP247 package Mass production HiP247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 - 200Cel 1 N ch
STMicroelectronics
MOS FETS Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mOhm (typ., TJ = 25 degC) in an HiP247 package Mass production HiP247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 ○ 200Cel 1 N ch
STMicroelectronics
MOS FETS Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ., TJ = 25 degC) in an HiP247 package Mass production HiP247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 - 200Cel 1 N ch
STMicroelectronics
MOS FETS Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25Cel) in an HiP247 package Mass production HiP247 15.6mm 5mm 20mm PCB insertion 5.3mm 5.45mm 5.6mm 3 - 1 N ch
STMicroelectronics
MOS FETS Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mohm (typ., TJ = 25 degC) in an HiP247 long leads package Mass production HiP247 long leads 15.8mm 5mm 21mm PCB insertion 5.34mm 5.44mm 5.54mm 3 ○ 200Cel 1 N ch
STMicroelectronics
MOS FETS Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mohm typ., 52 A in an HiP247 long leads package Mass production HiP247 long leads 15.8mm 5mm 21mm PCB insertion 5.34mm 5.44mm 5.54mm 3 ○ 200Cel 1 N ch
STMicroelectronics
MOS FETS RF power transistor:HF/VHF/UHF N-channel power MOSFET Mass production M174 24.765mm 6.35mm Surface mount technology 4 - 200Cel N ch
STMicroelectronics
MOS FETS HF/VHF/UHF RF power N-channel MOSFET Mass production M177 28.83mm 6.845mm Surface mount technology 4 - 200Cel 1 N ch
STMicroelectronics
MOS FETS HF/VHF/UHF RF power N-channel MOSFET Mass production M177 28.83mm 6.845mm Surface mount technology 4 - 200Cel 1 N ch
STMicroelectronics
MOS FETS RF POWER TRANSISTORS Mass production M243 20.32mm 5.845mm 3.815mm Surface mount technology 2 - 200Cel 1 N ch