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STMicroelectronics

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Part number	Manufecturer	Product's class name	Product name	Product lifecycle stage	Package type	Body length[Typ]	Body breadth[Typ]	Body height[Typ]	Mounting method	Pin Pitch[Min]	Pin Pitch[Typ]	Pin Pitch[Max]	Number of terminals[Nom]	AEC compliant	Channel temperature[Max]	Number of transistors[Nom]	Channel type	Drain current (DC)[Max]	Allowable power dissipation[Max]	Gate-source threshold voltage[Min]	Gate-source threshold voltage[Max]	Drain-source voltage[Max]	Drain-source current[Max]	Drain-source on-resistance @10V[Max]	Gate-source voltage at R_DS(on)_@10V[Typ]	Drain-source on-resistance 1[Typ]	Drain-source on-resistance 1[Max]	Gate-source voltage 1 at R_DS(on)_1[Typ]	Drain-source on-resistance 2[Typ]	Drain-source on-resistance 2[Max]	Gate-source voltage 2 at R_DS(on)_2[Typ]
PD55003-E	STMicroelectronics	MOS FETS	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFET	Mass production	PowerSO-10RF (formed lead)	9.4mm	7.5mm	3.5mm	Surface mount technology				2	-	165Cel	1	N ch	2.5A	31.7W	2V	5V	40V	1microA	0.75Ohm	10V
PD55015-E	STMicroelectronics	MOS FETS	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs	Mass production	PowerSO-10RF (formed lead)	9.4mm	7.5mm	3.5mm	Surface mount technology				2	-		1	N ch	5A	73W			40V	1microA
SCT20N120	STMicroelectronics	MOS FETS	Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mohm (typ., TJ=150 degC), N-channel in a HiP247	Mass production	Hip247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	-	200Cel	1	N ch	16A	175W	2V		1200V	100microA			169mOhm	239mOhm	20V
SCT20N170AG	STMicroelectronics	MOS FETS	Automotive-grade silicon carbide Power MOSFET 1700V, 6 mohm typ,43A in an HiP247 package	Mass production	HiP247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	○	200Cel	1	N ch	43A	313W	1.8V		1700V	10microA			64mOhm	86mOhm	20V
SCT30N120	STMicroelectronics	MOS FETS	Silicon carbide Power MOSFET 1200 V, 45 A, 90 mohm (typ., TJ = 150 degC) in an HiP247 package	Mass production	Hip247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	-	200Cel	1	N ch	40A	270W	1.8V		1200V	25microA			80mOhm	100mOhm	20V
SCT50N120	STMicroelectronics	MOS FETS	Silicon carbide Power MOSFET 1200 V, 65 A, 59 OHM (typ, TJ=150) in an HiP247 package	Mass production	HiP247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	-		1	N ch	65A	318W	1.8V	3V	1200V	100microA			52mOhm	69mOhm	20V
SCTH100N65G2-7AG	STMicroelectronics	MOS FETS	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mohm typ., 95 A in an H2PAK-7 package	Mass production	H2PAK-7	10.2mm		4.55mm	Surface mount technology	1.17mm	1.27mm	1.37mm	7	○	175Cel	1	N ch	95A	360W	1.9V	5V	650V	10microA			20mOhm	26mOhm	18V
SCTH35N65G2V-7AG	STMicroelectronics	MOS FETS	Automotive silicon carbide Power MOSFET 650 V, 45 A, 65 m ohm (typ., TJ = 175 Cel) in an H2PAK-7 package	Mass production	H2PAK-7	10.2mm		4.55mm	Surface mount technology	1.17mm	1.27mm	1.37mm	7	-	175Cel	1	N ch	45A	208W	1.8V		60V	50microA			55mOhm		18V	45mOhm	67mOhm	20V
SCTH90N65G2V-7	STMicroelectronics	MOS FETS	Silicon carbide Power MOSFET 650 V, 90 A, 18 m ohm (typ., TJ = 25 Cel) in an H2PAK-7 package	Mass production	H2PAK-7	10.2mm		4.55mm	Surface mount technology	1.17mm	1.27mm	1.37mm	7	-	175Cel	1	N ch	90A	330W	1.9V	5V		10microA			18mOhm	26mOhm	18V
SCTW100N65G2AG	STMicroelectronics	MOS FETS	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mohm typ., 100 A in an HiP247 package	Mass production	HiP247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	○	200Cel	1	N ch	100A	420W	1.9V	5V	650V	10microA			20mOhm	26mOhm	18V
SCTW35N65G2V	STMicroelectronics	MOS FETS	Silicon carbide Power MOSFET 650 V, 55 mohm typ., 45 A in an HiP247 package	Mass production	HiP247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	-	200Cel	1	N ch	45A	240W	1.8V	5V	650V	5microA			55mOhm		18V	45mOhm	67mOhm	20V
SCTW60N120G2AG	STMicroelectronics	MOS FETS	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mOhm (typ., TJ = 25 degC) in an HiP247 package	Mass production	HiP247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	○	200Cel	1	N ch	52A	388W	1.9V	5V	1200V	10microA			45mOhm	58mOhm	18V
SCTW70N120G2V	STMicroelectronics	MOS FETS	Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ., TJ = 25 degC) in an HiP247 package	Mass production	HiP247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	-	200Cel	1	N ch	91A	547W	1.9V	4.9V	1200V	10microA			21mOhm	30mOhm	18V
SCTW90N65G2V	STMicroelectronics	MOS FETS	Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25Cel) in an HiP247 package	Mass production	HiP247	15.6mm	5mm	20mm	PCB insertion	5.3mm	5.45mm	5.6mm	3	-		1	N ch	119A	565W	1.9V	5V	650V	10microA			18mOhm	24mOhm	18V
SCTWA35N65G2VAG	STMicroelectronics	MOS FETS	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mohm (typ., TJ = 25 degC) in an HiP247 long leads package	Mass production	HiP247 long leads	15.8mm	5mm	21mm	PCB insertion	5.34mm	5.44mm	5.54mm	3	○	200Cel	1	N ch	45A	240W	1.8V	5V	650V	50microA			55mOhm		18V	45mOhm	67mOhm	20V
SCTWA60N120G2AG	STMicroelectronics	MOS FETS	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mohm typ., 52 A in an HiP247 long leads package	Mass production	HiP247 long leads	15.8mm	5mm	21mm	PCB insertion	5.34mm	5.44mm	5.54mm	3	○	200Cel	1	N ch	52A	388W	1.9V	5V	1200V	10microA			45mOhm	58mOhm	18V
SD2931-10W	STMicroelectronics	MOS FETS	RF power transistor:HF/VHF/UHF N-channel power MOSFET	Mass production	M174	24.765mm	6.35mm		Surface mount technology				4	-	200Cel		N ch	20A	389W			125V	50microA
SD2943W	STMicroelectronics	MOS FETS	HF/VHF/UHF RF power N-channel MOSFET	Mass production	M177	28.83mm	6.845mm		Surface mount technology				4	-	200Cel	1	N ch	40A	648W	2V	4V	130V	200microA
SD4933	STMicroelectronics	MOS FETS	HF/VHF/UHF RF power N-channel MOSFET	Mass production	M177	28.83mm	6.845mm		Surface mount technology				4	-	200Cel	1	N ch	40A	648W	2.5V	3.75V	200V	2mA
SD57045	STMicroelectronics	MOS FETS	RF POWER TRANSISTORS	Mass production	M243	20.32mm	5.845mm	3.815mm	Surface mount technology				2	-	200Cel	1	N ch	5A	93W	2.5V	5V	65V	1microA