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    IGBT DISCRETE (341)
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Family or series name
Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Number of transistors[Nom]
Gate-emitter leakage current[Typ] (A)
Gate-emitter leakage current[Max] (A)
Collector-emitter saturation voltage[Typ] (V)
Collector-emitter saturation voltage[Max] (V)
Gate-emitter voltage[Max] (V)
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
Collector-emitter cutoff current[Max] (A)
Collector-emitter voltage[Max] (V)
Gate-emitter threshold voltage[Min] (V)
Gate-emitter threshold voltage[Typ] (V)
Gate-emitter threshold voltage[Max] (V)
Input capacitance[Typ] (F)
Channel type
Applied filter
Manufecturer =
STMicroelectronics
Product lifecycle stage =
Development in progress
Scheduled to be discontinued
New design not recommended
Advance preparation
Mass production

Purchase Number of records to be displayed:
STMicroelectronics
IGBT DISCRETE Trench gate field-stop IGBT, H series 600 V, 10 A high speed Mass production D2PAK Surface mount technology 2.54mm 3 - 1 1.5V 1.95V 10A 115W 600V 5V 6V 7V 1300pF N ch
STMicroelectronics
IGBT DISCRETE Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D2PAK package Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 - 1 1.55V 2V 10A 115W 650V 5V 6V 7V 840pF N ch
STMicroelectronics
IGBT DISCRETE Automotive-grade 10 A, 410 V internally clamped IGBT Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 ○ 1 1.2V 1.8V 10A 150W 440V 0.6V 2.2V 1300pF N ch
STMicroelectronics
IGBT DISCRETE 16 A, 600 V, low drop IGBT Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 - 1 1.35V 1.75V 16A 80W 600V 0.46micros 2.5V 5V 610pF N ch
STMicroelectronics
IGBT DISCRETE 600 V - 10 A - very fast IGBT Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 - 1 1.9V 2.5V 10A 65W 600V 5ns 3.75V 5.75V 365pF N ch
STMicroelectronics
IGBT DISCRETE 10 A, 600 V short-circuit rugged IGBT Mass production D2PAK/TO-263 Surface mount technology 3 - 1 2.2V 2.5V 10A 65W 600V 4.5V 6.5V 380pF N ch
STMicroelectronics
IGBT DISCRETE N-CHANNEL 18A-600V D^2PAK SHORT CIRCUIT PROOF PowerMESH IGBT Mass production D^2PAK Surface mount technology 2.2V 2.8V 18A 125W
STMicroelectronics
IGBT DISCRETE 14 A, 600 V short-circuit rugged IGBT Mass production D2PAK/TO-263 Surface mount technology 3 - 1 2.1V 2.5V 14A 80W 600V 4.5V 6.5V 760pF N ch
STMicroelectronics
IGBT DISCRETE N-channel 14 A - 600 V -DPAK - D2PAK Short circuit rated PowerMESH IGBT Mass production D2PAK Surface mount technology 2.44mm 2.64mm 3 - 1 2V 2.5V 14A 80W 600V 4.5V 6.5V 760pF N ch
STMicroelectronics
IGBT DISCRETE Trench gate field-stop IGBT, H series 600 V, 15 A high speed Mass production D2PAK Surface mount technology 2.54mm 3 - 1 1.6V 2V 15A 115W 600V 5V 6V 7V 1952pF N ch
STMicroelectronics
IGBT DISCRETE Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D2PAK package Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 - 1 1.55V 2V 15A 136W 650V 5V 6V 7V 1250pF N ch
STMicroelectronics
IGBT DISCRETE Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 ○ 1 1.35V 1.7V 30A 150W 420V 0.7V 2.3V 490pF N ch
STMicroelectronics
IGBT DISCRETE 19 A, 600 V, very fast IGBT with ultrafast diode Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 - 1 1.8V 2.5V 19A 130W 600V 3.75V 5.75V 1180pF N ch
STMicroelectronics
IGBT DISCRETE 20 A, 600 V short-circuit rugged IGBT Mass production D2PAK/TO-263 Surface mount technology 3 - 1 2V 2.75V 20A 125W 600V 8ns 4.5V 6.5V 1170pF N ch
STMicroelectronics
IGBT DISCRETE 600 V, 20 A high speed trench gate field-stop IGBT Mass production D2PAK Surface mount technology 2.54mm 3 - 1 1.6V 2V 20A 167W 600V 5V 6V 7V 2750pF N ch
STMicroelectronics
IGBT DISCRETE Trench gate field-stop IGBT, M series 650 V, 20 A low loss Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 - 1 1.55V 2V 20A 166W 650V 5V 6V 7V 1688pF N ch
STMicroelectronics
IGBT DISCRETE Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 ○ 1 1.5V 1.8V 25A 150W 425V 0.85V 2.5V 910pF N ch
STMicroelectronics
IGBT DISCRETE Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ Mass production D2PAK/TO-263 Surface mount technology 2.54mm 3 ○ 1 1.25V 1.55V 25A 150W 475V 1.3V 1.7V 2.1V 1011pF N ch
STMicroelectronics
IGBT DISCRETE N-CHANNEL CLAMPED 20A-I^2PAK INTERNALLY CLAMPED PowerMESH IGBT Mass production I^2PAK 1.35V 2V 40A 150W 2V
STMicroelectronics
IGBT DISCRETE N-CHANNEL CLAMPED 20A-D^2PAK INTERNALLY CLAMPED PowerMESH IGBT Mass production D^2PAK Surface mount technology 1.35V 2V 40A 150W 2V