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Manufecturer =

Toshiba Corporation Semiconductor

Part number	Manufecturer	Product's class name	Product name	Product lifecycle stage	Memory capacity (bit)[Nom]	Word size[Nom]	Operating ambient temperature[Min]	Operating ambient temperature[Max]	Read cycle time[Min]	Supply voltage[Min]	Supply voltage[Typ]	Supply voltage[Max]	Block erasing time[Typ]
TC58BVG0S3HBAI4	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	1073741824bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG0S3HBAI6	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	1073741824bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG0S3HTA00	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	1073741824bit		0Cel	70Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG0S3HTAI0	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	1073741824bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG1S3HBAI4	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	2147483648bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG1S3HBAI6	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	2147483648bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG1S3HTA00	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	2147483648bit		0Cel	70Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG1S3HTAI0	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	2147483648bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG2S0HBAI4	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	4294967296bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG2S0HBAI6	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	4294967296bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG2S0HTA00	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	4294967296bit		0Cel	70Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BVG2S0HTAI0	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	4294967296bit		-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58BYG0S3HBAI4	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	1073741824bit		-40Cel	85Cel	25ns	1.7V	1.8V	1.95V	3.5ms
TC58BYG0S3HBAI6	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	1073741824bit		-40Cel	85Cel	25ns	1.7V	1.8V	1.95V	3.5ms
TC58BYG1S3HBAI4	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	2147483648bit		-40Cel	85Cel	25ns	1.7V	1.8V	1.95V	3.5ms
TC58BYG1S3HBAI6	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	2147483648bit		-40Cel	85Cel	25ns	1.7V	1.8V	1.95V	3.5ms
TC58BYG2S0HBAI4	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	4294967296bit		-40Cel	85Cel	25ns	1.7V	1.8V	1.95V	3.5ms
TC58BYG2S0HBAI6	Toshiba Corporation Semiconductor	FLASH MEMORIES	BENAND (Built-in ECC SLCNAND)	Mass production	4294967296bit		-40Cel	85Cel	25ns	1.7V	1.8V	1.95V	3.5ms
TC58NVG0S3HBAI4	Toshiba Corporation Semiconductor	FLASH MEMORIES		Mass production	1073741824bit	8bit	-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms
TC58NVG0S3HBAI6	Toshiba Corporation Semiconductor	FLASH MEMORIES		Mass production	1073741824bit	8bit	-40Cel	85Cel	25ns	2.7V	3.3V	3.6V	2.5ms