IC > GALLIUM ARSENIDE DEVICES > GALLIUM ARSENIDE FETS (7)
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Product lifecycle stage
Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Drain-source voltage[Max] (V)
Gate-source voltage[Max] (V)
Saturation drain current[Min] (A)
Saturation drain current[Typ] (A)
Saturation drain current[Max] (A)
Transconductance[Typ] (S)
Pinch-off voltage[Typ] (V)
Pinch-off voltage[Max] (V)
Power gain at 1 dB G.C.P.[Min] (dB)
Power gain at 1 dB G.C.P.[Typ] (dB)
Applied filter
Manufecturer =
Toshiba Corporation Semiconductor

Purchase Number of records to be displayed:
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Discontinued products 2-2K1C 2mm 1.25mm Surface mount technology 15mA 40mA 80mA -0.8V -2V 18dB 21.5dB
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Discontinued products 2-2K1C 2mm 1.25mm Surface mount technology 40mA 55mA 80mA -0.8V -2V 17dB 19.5dB
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Discontinued products 2-4F1A PCB insertion 10V 20mA 45mA -2.5V -4V
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Discontinued products 2-3J1A 2.9mm 1.5mm 1.05mm Surface mount technology 10V 20mA 45mA -2.5V -4V
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Maintained products 2-3J1A 2.9mm 1.5mm 1.1mm Surface mount technology
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Maintained products 2-2K1B 2mm 1.25mm 0.95m Surface mount technology
Toshiba Corporation Semiconductor
GALLIUM ARSENIDE FETS Maintained products 2-2K1B 2mm 1.25mm 0.95m Surface mount technology