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HIGH ELECTRON MOBILITY TRANSISTORS

IC > GALLIUM ARSENIDE DEVICES > HIGH ELECTRON MOBILITY TRANSISTORS (10)
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NEXTY sales results
Product lifecycle stage
Package type
Body length[Typ]
Body breadth[Typ]
Gate-source voltage limit[Max] (V)
Gate-drain voltage limit[Max] (V)
Drain current limit[Max] (A)
Total power dissipation[Max] (W)
Noise figure[Typ] (dB)
Noise figure[Max] (dB)
Applied filter
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Toshiba Corporation Semiconductor

Purchase Number of records to be displayed:
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products 2-2G1A 1.8mm 1.8mm 150mW 0.7dB 0.95dB
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products
Toshiba Corporation Semiconductor
HIGH ELECTRON MOBILITY TRANSISTORS Discontinued products