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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
Number of elements[Nom]
AEC compliant
Operating ambient temperature[Min] (Cel)
Operating ambient temperature[Max] (Cel)
Operating junction temperature[Max] (Cel)
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Toshiba Corporation Semiconductor

Purchase Number of records to be displayed:
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-5BF1 6.4mm 5mm 1.35mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-5BF1 6.4mm 5mm 1.35mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-5BF1 6.4mm 5mm 1.35mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-5BF1 6.4mm 5mm 1.35mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - -40Cel 100Cel 130Cel InGaN