IC > OPTO ELECTRONIC DEVICES > LIGHT EMITTING DIODES (1,713)
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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
Number of elements[Nom]
AEC compliant
Emitting color
Dominant wavelength[Min] (m)
Dominant wavelength[Typ] (m)
Dominant wavelength[Max] (m)
Peak wavelength[Typ] (m)
Optical output power[Min] (W)
Optical output power[Typ] (W)
Luminous intensity[Min] (cd)
Luminous intensity[Typ] (cd)
Luminous intensity[Max] (cd)
Luminous flux[Min] (lm)
Luminous flux[Typ] (lm)
Luminous flux[Max] (lm)
Forward current[Max] (A)
Forward voltage[Typ] (V)
Forward voltage[Max] (V)
Chromaticity x[Min]
Chromaticity x[Max]
Chromaticity y[Min]
Chromaticity y[Max]
Color temperature[Min] (K)
Color temperature[Typ] (K)
Color temperature[Max] (K)
Operating ambient temperature[Min] (Cel)
Operating ambient temperature[Max] (Cel)
Operating junction temperature[Max] (Cel)
Applied filter
Manufecturer =
Toshiba Corporation Semiconductor

Purchase Number of records to be displayed:
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-5BF1 6.4mm 5mm 1.35mm Surface mount technology 2 1 - White 120lm 350mA 135lm 350mA 145lm 350mA 550mA 2.85V 3.3V 0.3028 0.3221 0.3113 0.3481 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-5BF1 6.4mm 5mm 1.35mm Surface mount technology 2 1 - White 120lm 350mA 135lm 350mA 145lm 350mA 550mA 2.85V 3.3V 0.3366 0.3551 0.3369 0.376 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-5BF1 6.4mm 5mm 1.35mm Surface mount technology 2 1 - White 115lm 350mA 128lm 350mA 145lm 350mA 550mA 2.85V 3.3V 0.3366 0.3551 0.3369 0.376 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-5BF1 6.4mm 5mm 1.35mm Surface mount technology 2 1 - White 105lm 350mA 120lm 350mA 135lm 350mA 550mA 2.85V 3.3V 0.367 0.4006 0.3578 0.4044 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - White 120lm 350mA 135lm 350mA 145lm 350mA 1000mA 2.85V 3.3V 0.3028 0.3221 0.3113 0.3481 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - White 90lm 350mA 104lm 350mA 115lm 350mA 1000mA 2.85V 3.3V 0.4373 0.4813 0.3893 0.4319 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - White 95lm 350mA 111lm 350mA 120lm 350mA 1000mA 2.85V 3.3V 0.4147 0.4562 0.3814 0.426 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - White 120lm 350mA 135lm 350mA 145lm 350mA 1000mA 2.85V 3.3V 0.3366 0.3551 0.3369 0.376 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - White 115lm 350mA 128lm 350mA 145lm 350mA 1000mA 2.85V 3.3V 0.3366 0.3551 0.3369 0.376 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4M1 3.5mm 3.5mm 1.93mm Surface mount technology 2 1 - White 105lm 350mA 120lm 350mA 135lm 350mA 1000mA 2.85V 3.3V 0.367 0.4006 0.3578 0.4044 120K -40Cel 100Cel 130Cel InGaN 100microA
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - White 125lm 350mA 135lm 350mA 150lm 350mA 1000mA 2.85V 3.3V 0.2829 0.3068 0.2905 0.3304 100K -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - White 130lm 350mA 145lm 350mA 160lm 350mA 1000mA 2.85V 3.3V 0.3028 0.3221 0.3113 0.3481 100K -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - White 95lm 350mA 112lm 350mA 125lm 350mA 1000mA 2.85V 3.3V 0.4373 0.4813 0.3893 0.4319 100K -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - White 105lm 350mA 119lm 350mA 135lm 350mA 1000mA 2.85V 3.3V 0.4147 0.4562 0.3814 0.426 100K -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - White 130lm 350mA 145lm 350mA 160lm 350mA 1000mA 2.85V 3.3V 0.3207 0.3376 0.3243 0.3616 100K -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - White 130lm 350mA 145lm 350mA 160lm 350mA 1000mA 2.85V 3.3V 0.3366 0.3551 0.3369 0.376 100K -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - White 120lm 350mA 135lm 350mA 150lm 350mA 1000mA 2.85V 3.3V 0.3366 0.3551 0.3369 0.376 100K -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4N1 3.5mm 3.5mm 2.42mm Surface mount technology 2 1 - White 115lm 350mA 129lm 350mA 145lm 350mA 1000mA 2.85V 3.3V 0.367 0.4006 0.3578 0.4044 100K -40Cel 100Cel 130Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4P1A 3.5mm 3.5mm 2.05mm Surface mount technology 2 1 - White 130lm 350mA 85Cel 135lm 350mA 85Cel 160lm 350mA 85Cel 1500mA 2.8V 3.2V 0.3028 0.3221 0.3113 0.3481 120K -40Cel 125Cel 150Cel InGaN
Toshiba Corporation Semiconductor
LIGHT EMITTING DIODES Mass production 4-4P1A 3.5mm 3.5mm 2.05mm Surface mount technology 2 1 - White 100lm 350mA 85Cel 110lm 350mA 85Cel 130lm 350mA 85Cel 1500mA 2.8V 3.2V 0.4373 0.4813 0.3893 0.4319 120K -40Cel 125Cel 150Cel InGaN