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Body length[Typ]
Body breadth[Typ]
Body height[Typ]
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Number of elements[Nom]
Operating ambient temperature[Min] (Cel)
Operating ambient temperature[Max] (Cel)
Photocoupler output type
Forward current[Max] (A)
Isolation voltage[Min] (V)
Current transfer ratio[Min] (%)
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Toshiba Corporation Semiconductor

Purchase Number of records to be displayed:
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production 11-4L1 3.7mm 4.55mm 2.1mm Surface mount technology 1 -40Cel 125Cel GaAlAs 25mA 3750V
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production 11-4C2 4.4mm 3.6mm 2.5mm Surface mount technology 1 -40Cel 100Cel GaAlAs 20mA 3750V
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production 11-4C2 4.4mm 3.6mm 2.5mm Surface mount technology 1 -40Cel 100Cel GaAlAs 20mA 3750V
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production 11-4L1 4.55mm 3.7mm 2.1mm Surface mount technology 1 -55Cel 125Cel GaAlAs 20mA 3750V 20%
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Scheduled to be discontinued 11-4C2 4.4mm 3.6mm 2.5mm Surface mount technology 1 -55Cel 100Cel GaAlAs 25mA 2500V 10%
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Scheduled to be discontinued 11-4C2 4.4mm 3.6mm 2.5mm Surface mount technology 1 -55Cel 100Cel GaAlAs 20mA 2500V 20%
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Scheduled to be discontinued 11-4C2 4.4mm 3.6mm 2.5mm Surface mount technology 1 -40Cel 85Cel GaAlAs 10mA 2500V
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Scheduled to be discontinued 11-4C2 4.4mm 3.6mm 2.5mm Surface mount technology 1 -55Cel 100Cel GaAlAs 20mA 3750V 20%
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production 11-4L1 4.55mm 3.7mm 2.1mm Surface mount technology 1 -40Cel 100Cel GaAlAs 20mA 3750V
Toshiba Corporation Semiconductor
PHOTOCOUPLERS New design not recommended 11-4C2 3.6mm 4.4mm 2.5mm Surface mount technology 1 -40Cel 105Cel GaAlAs 25mA 3750V
Toshiba Corporation Semiconductor
PHOTOCOUPLERS Mass production 11-4L1 3.7mm 4.55mm 2.1mm Surface mount technology 1 -40Cel 125Cel GaAlAs 25mA 3750V
Toshiba Corporation Semiconductor
PHOTOCOUPLERS New design not recommended 11-4C1(TOS) 4.4mm 3.6mm 2.5mm Surface mount technology 1 -55Cel 100Cel GaAs 50mA 3750V 100% 1200%
Toshiba Corporation Semiconductor
PHOTOCOUPLERS New design not recommended 11-4C1(TOS) 4.4mm 3.6mm 2.5mm Surface mount technology 1 -55Cel 100Cel GaAs 50mA 3750V 100% 1200%
Toshiba Corporation Semiconductor
PHOTOCOUPLERS New design not recommended 11-4C1(TOS) 4.4mm 3.6mm 2.5mm Surface mount technology 1 -55Cel 100Cel GaAs 50mA 2500V 1000%
Toshiba Corporation Semiconductor
PHOTOCOUPLERS New design not recommended 11-4C2(TOS) 4.4mm 3.6mm 2.5mm Surface mount technology 1 -55Cel 100Cel GaAs 50mA 3750V 50% 600%