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Toshiba Corporation Semiconductor

Part number	Manufecturer	Product's class name	Product name	Product lifecycle stage	Package type	Body length[Typ]	Body breadth[Typ]	Body height[Typ]	Mounting method	Pin Pitch[Min]	Pin Pitch[Typ]	Pin Pitch[Max]	Number of terminals[Nom]	AEC compliant	Number of transistors[Nom]
2SA1162-GR,LF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	1
2SA1162-GR,LXGF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1162-GR,LXHF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1162-O,LF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	1
2SA1162-O,LXGF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1162-O,LXHF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1162-Y,LF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	-	1
2SA1162-Y,LXGF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1162-Y,LXHF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Bipolar Transistors Silicon PNP Epitaxial Type	Mass production	S-Mini/2-3F1S	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1163_BL	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1163_BL,LF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1163_GR	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1163_GR,LF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1182_GR	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1182_GR,LF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1182_O	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1182_O,LF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1182_Y	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1182_Y,LF	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	TO-236MOD/SC-59/2-3F1A	2.9mm	1.5mm	1.1mm	Surface mount technology		0.95mm		3	○	1
2SA1201_O	Toshiba Corporation Semiconductor	GENERAL PURPOSE BIPOLAR TRANSISTORS	Silicon PNP Epitaxial Type (PCT process)	Mass production	SC-62/2-5K1A		2.5mm		Surface mount technology	1.4mm	1.5mm	1.6mm	3	-	1