Home » Discrete » TRANSISTORS » BIPOLAR TRANSISTORS

BIPOLAR TRANSISTORS

Discrete > TRANSISTORS > BIPOLAR TRANSISTORS (2,723)
Members only

NEXTY trading products -> You can search for components that Nexty Electronics has used in the consumer and automotive fields.
Prioritize NEXTY support -> Manufacturers that have a business area near your company will appear at the top of the search results.
For parts with NEXTY support, you will be able to make technical inquiries about the parts.

NEXTY sales results
Product lifecycle stage
Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Junction temperature[Max] (Cel)
Number of transistors[Nom]
Number of NPN transistors[Nom]
Number of PNP transistors[Nom]
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
DC current gain[Min]
DC current gain[Max]
Collector-emitter saturation voltage 1[Typ] (V)
Collector-emitter saturation voltage 1[Max] (V)
Collector-emitter saturation voltage 2[Typ] (V)
Collector-emitter saturation voltage 2[Max] (V)
Collector-emitter saturation voltage 3[Typ] (V)
Collector-emitter saturation voltage 3[Max] (V)
Collector-emitter voltage[Max] (V)
TR polarity
Applied filter
Manufecturer =
Toshiba Corporation Semiconductor

Purchase Number of records to be displayed:
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -150mA 200mW 200 400 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -150mA 150mW 200 400 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -150mA 150mW 200 400 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -150mA 200mW 70 140 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -150mA 150mW 70 140 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -150mA 150mW 70 140 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -150mA 200mW 120 240 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -150mA 150mW 120 240 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Bipolar Transistors Silicon PNP Epitaxial Type Mass production S-Mini/2-3F1S 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -150mA 150mW 120 240 -0.1V -0.3V -100mA -50V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -100mA 150mW 350 700 -0.3V -10mA -120V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 150Cel 1 0 1 -100mA 200mW 350 700 -0.3V -10mA -120V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -100mA 150mW 200 400 -0.3V -10mA -120V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 150Cel 1 0 1 -100mA 200mW 200 400 -0.3V -10mA -120V PNP 1dB 10dB
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -500mA 150mW 70 400 -0.1V -0.25V -100mA -30V PNP
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 150Cel 1 0 1 -500mA 200mW 70 400 -0.1V -0.25V -100mA -30V PNP
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -500mA 150mW 25 140 -0.1V -0.25V -100mA -30V PNP
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 150Cel 1 0 1 -500mA 200mW 25 140 -0.1V -0.25V -100mA -30V PNP
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 125Cel 1 0 1 -500mA 150mW 40 240 -0.1V -0.25V -100mA -30V PNP
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production TO-236MOD/SC-59/2-3F1A 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 ○ 150Cel 1 0 1 -500mA 200mW 40 240 -0.1V -0.25V -100mA -30V PNP
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon PNP Epitaxial Type (PCT process) Mass production SC-62/2-5K1A 2.5mm Surface mount technology 1.4mm 1.5mm 1.6mm 3 - 150Cel 1 0 1 -800mA 500mW 80 160 -1V -500mA -120V PNP