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IGBT DISCRETE

Discrete > TRANSISTORS > IGBTS > IGBT DISCRETE (160)
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Product lifecycle stage
Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Number of transistors[Nom]
Gate-emitter leakage current[Max] (A)
Collector-emitter saturation voltage[Typ] (V)
Collector-emitter saturation voltage[Max] (V)
Gate-emitter voltage[Max] (V)
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
Collector-emitter cutoff current[Max] (A)
Collector-emitter voltage[Max] (V)
Gate-emitter threshold voltage[Min] (V)
Gate-emitter threshold voltage[Max] (V)
Input capacitance[Typ] (F)
Applied filter
Manufecturer =
Toshiba Corporation Semiconductor

Purchase Number of records to be displayed:
Toshiba Corporation Semiconductor
IGBT DISCRETE Scheduled to be discontinued 1 2.3V 1.9W 400V 2.8micros
Toshiba Corporation Semiconductor
IGBT DISCRETE Scheduled to be discontinued 2-16C1C 20mm 1 2.1V 2.7V 10A 140W 1200V 0.07micros
Toshiba Corporation Semiconductor
IGBT DISCRETE Scheduled to be discontinued 2-16C1C 20mm 1 2.1V 2.7V 10A 140W 1200V 0.07micros
Toshiba Corporation Semiconductor
IGBT DISCRETE Mass production TO220SIS / 2-10U1S / SC-67 1.5V 2V 8A 30W 600V 0.03micros 1390pF
Toshiba Corporation Semiconductor
IGBT DISCRETE Scheduled to be discontinued 2-16C1C 20mm 1 2.1V 2.7V 15A 170W 1200V 0.05micros
Toshiba Corporation Semiconductor
IGBT DISCRETE Mass production TO220SIS / 2-10U1S / SC-67 1.25V 1.80V 20A 40W 600V 0.10micros 2700pF
Toshiba Corporation Semiconductor
IGBT DISCRETE Scheduled to be discontinued 2-16C1C 20mm 1 2.1V 2.7V 20A 130W 600V 0.12micros
Toshiba Corporation Semiconductor
IGBT DISCRETE Mass production TO220SIS / 2-10U1S / SC-67 1.5V 2V 11A 45W 600V 0.04micros 1790pF
Toshiba Corporation Semiconductor
IGBT DISCRETE Scheduled to be discontinued 2-21F1C 26mm 1 2.1V 2.7V 25A 200W 1200V 0.1micros
Toshiba Corporation Semiconductor
IGBT DISCRETE Scheduled to be discontinued TO220SIS / 2-10U1S / SC-67 2.6V 3.2V 18W 330V 180ns 795pF
Toshiba Corporation Semiconductor
IGBT DISCRETE New design not recommended DPAK(ASE) / 2-7N1A 6.35mm 5.97mm 2.18mm Surface mount technology 2.3V 2.9V 60W 330V 180ns 860pF
Toshiba Corporation Semiconductor
IGBT DISCRETE Mass production TO-3P(N) / 2-16C119A 15.5mm 20mm 4.5mm PCB insertion 1 2V 2.45V 30A 170W 600V 0.07micros
Toshiba Corporation Semiconductor
IGBT DISCRETE New design not recommended TO3P(N)IS / 2-16F1S 15.8mm 5mm 21mm 1 2.1V 2.8V 30A 75W 600V 0.2micros
Toshiba Corporation Semiconductor
IGBT DISCRETE Mass production TO3P(N) / 2-16C1S / SC-65 1.7V 2.8V 30A 120W 600V 0.2micros 2500pF
Toshiba Corporation Semiconductor
IGBT DISCRETE New design not recommended TO3P(N)IS / 2-16F1S 15.8mm 5mm 21mm 1 1.95V 2.45V 30A 90W 600V 0.07micros
Toshiba Corporation Semiconductor
IGBT DISCRETE New design not recommended TO220SIS / 2-10U1S / SC-67 2.6V 3.1V 25W 600V 80ns 1245pF
Toshiba Corporation Semiconductor
IGBT DISCRETE Scheduled to be discontinued 2-16C1C 20mm 1 2.1V 2.7V 30A 155W 600V 0.12micros
Toshiba Corporation Semiconductor
IGBT DISCRETE New design not recommended TO3P(N)IS / 2-16F1S 15.8mm 5mm 21mm 1 2.1V 2.8V 30A 75W 600V 0.2micros
Toshiba Corporation Semiconductor
IGBT DISCRETE New design not recommended TO-3P(N) / 2-16C119A 15.5mm 20mm 4.5mm PCB insertion 1 2V 2.45V 30A 170W 600V 0.07micros
Toshiba Corporation Semiconductor
IGBT DISCRETE Mass production TO3P(N) / 2-16C1S / SC-65 1.5V 2V 33A 230W 600V 0.06micros 2900pF