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GENERAL PURPOSE BIPOLAR TRANSISTORS

Discrete > TRANSISTORS > BIPOLAR TRANSISTORS > GENERAL PURPOSE BIPOLAR TRANSISTORS (1,331)
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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Typ]
Number of terminals[Nom]
AEC compliant
Junction temperature[Max] (Cel)
Number of transistors[Nom]
Number of NPN transistors[Nom]
Number of PNP transistors[Nom]
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
DC current gain[Min]
DC current gain[Max]
Collector-emitter saturation voltage 1[Typ] (V)
Collector-emitter saturation voltage 1[Max] (V)
Collector-emitter voltage[Max] (V)
TR polarity
Input resistance[Min] (Ohm)
Input resistance[Nom] (Ohm)
Input resistance[Max] (Ohm)
Resistance ratio(R1/R2)[Min]
Resistance ratio(R1/R2)[Nom]
Resistance ratio(R1/R2)[Max]
Resistance between base and emitter[Min] (Ohm)
Resistance between base and emitter[Nom] (Ohm)
Resistance between base and emitter[Max] (Ohm)
Applied filter
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Toshiba Corporation Semiconductor

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Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production 2-2H1A 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 1 0 100mA 100mW 30 0.1V 0.3V 5mA 50V NPN 3.29kOhm 6.11kOhm 0.9 1 1.1 4.7kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 1 0 100mA 100mW 30 0.1V 0.3V 5mA 50V NPN 3.29kOhm 4.7kOhm 6.11kOhm 0.9 1 1.1 3.656kOhm 4.7kOhm 5.555kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 ○ 150Cel 1 1 0 100mA 100mW 30 0.1V 0.3V 5mA 50V NPN 3.29kOhm 4.7kOhm 6.11kOhm 0.9 1 1.1 3.656kOhm 4.7kOhm 5.555kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 ○ 150Cel 1 1 0 100mA 100mW 30 0.1V 0.3V 5mA 50V NPN 3.29kOhm 4.7kOhm 6.11kOhm 0.9 1 1.1 3.656kOhm 4.7kOhm 5.555kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production VESM/1-1Q1S 1.2mm 0.8mm 0.5mm Surface mount technology 0.4mm 3 - 150Cel 1 1 0 100mA 150mW 30 0.1V 0.3V 5mA 50V NPN 3.29kOhm 6.11kOhm 0.8 1 1.2 4.7kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production VESM/1-1Q1S 1.2mm 0.8mm 0.5mm Surface mount technology 0.4mm 3 - 150Cel 1 1 0 100mA 150mW 30 0.1V 0.3V 5mA 50V NPN 3.29kOhm 4.7kOhm 6.11kOhm 0.8 1 1.2 4.113kOhm 4.7kOhm 5.092kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production VESM/1-1Q1S 1.2mm 0.8mm 0.5mm Surface mount technology 0.4mm 3 ○ 150Cel 1 1 0 100mA 150mW 30 0.1V 0.3V 5mA 50V NPN 3.29kOhm 4.7kOhm 6.11kOhm 0.8 1 1.2 4.113kOhm 4.7kOhm 5.092kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production VESM/1-1Q1S 1.2mm 0.8mm 0.5mm Surface mount technology 0.4mm 3 ○ 150Cel 1 1 0 100mA 150mW 30 0.1V 0.3V 5mA 50V NPN 3.29kOhm 4.7kOhm 6.11kOhm 0.8 1 1.2 4.113kOhm 4.7kOhm 5.092kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production 2-2H1A 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 1 0 100mA 100mW 50 0.1V 0.3V 5mA 50V NPN 7kOhm 10kOhm 13kOhm 0.9 1 1.1 7.77kOhm 10kOhm 11.8kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 1 0 100mA 100mW 50 0.1V 0.3V 5mA 50V NPN 7kOhm 10kOhm 13kOhm 0.9 1 1.1 7.778kOhm 10kOhm 11.818kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 ○ 150Cel 1 1 0 100mA 100mW 50 0.1V 0.3V 5mA 50V NPN 7kOhm 10kOhm 13kOhm 0.9 1 1.1 7.778kOhm 10kOhm 11.818kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 ○ 150Cel 1 1 0 100mA 100mW 50 0.1V 0.3V 5mA 50V NPN 7kOhm 10kOhm 13kOhm 0.9 1 1.1 7.778kOhm 10kOhm 11.818kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production VESM/1-1Q1S 1.2mm 0.8mm 0.5mm Surface mount technology 0.4mm 3 - 150Cel 1 1 0 100mA 150mW 50 0.1V 0.3V 5mA 50V NPN 7kOhm 10kOhm 13kOhm 0.8 1 1.2 8.75kOhm 10kOhm 10.8kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production VESM/1-1Q1S 1.2mm 0.8mm 0.5mm Surface mount technology 0.4mm 3 - 150Cel 1 1 0 100mA 150mW 50 0.1V 0.3V 5mA 50V NPN 7kOhm 10kOhm 13kOhm 0.8 1 1.2 8.75kOhm 10kOhm 10.833kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production VESM/1-1Q1S 1.2mm 0.8mm 0.5mm Surface mount technology 0.4mm 3 ○ 150Cel 1 1 0 100mA 150mW 50 0.1V 0.3V 5mA 50V NPN 7kOhm 10kOhm 13kOhm 0.8 1 1.2 8.75kOhm 10kOhm 10.833kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production VESM/1-1Q1S 1.2mm 0.8mm 0.5mm Surface mount technology 0.4mm 3 ○ 150Cel 1 1 0 100mA 150mW 50 0.1V 0.3V 5mA 50V NPN 7kOhm 10kOhm 13kOhm 0.8 1 1.2 8.75kOhm 10kOhm 10.833kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production 2-2H1A 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 1 0 100mA 100mW 70 0.1V 0.3V 5mA 50V NPN 15.4kOhm 22kOhm 28.6kOhm 0.9 1 1.1 17.1kOhm 22kOhm 26kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 - 150Cel 1 1 0 100mA 100mW 70 0.1V 0.3V 5mA 50V NPN 15.4kOhm 22kOhm 28.6kOhm 0.9 1 1.1 17.111kOhm 22kOhm 26kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 ○ 150Cel 1 1 0 100mA 100mW 70 0.1V 0.3V 5mA 50V NPN 15.4kOhm 22kOhm 28.6kOhm 0.9 1 1.1 17.111kOhm 22kOhm 26kOhm
Toshiba Corporation Semiconductor
GENERAL PURPOSE BIPOLAR TRANSISTORS Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) Mass production SSM/2-2H1S 1.6mm 0.8mm 0.7mm Surface mount technology 0.5mm 3 ○ 150Cel 1 1 0 100mA 100mW 70 0.1V 0.3V 5mA 50V NPN 15.4kOhm 22kOhm 28.6kOhm 0.9 1 1.1 17.111kOhm 22kOhm 26kOhm