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Discrete > TRANSISTORS > IGBTS > IGBT DISCRETE (215)

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Fairchild Semiconductor

Part number	Manufecturer	Product's class name	Product name	Product lifecycle stage	Package type	Mounting method	Collector-emitter saturation voltage[Typ]	Collector-emitter saturation voltage[Max]	Collector current (DC)[Max]	Collector-emitter power dissipation[Max]	Gate-emitter threshold voltage[Max]
FGA15N120AND	Fairchild Semiconductor	IGBT DISCRETE	IGBT	Mass production	TO-3P	PCB insertion	2.4V	3.2V	24A	80W	7.5V
FGA25N120AN	Fairchild Semiconductor	IGBT DISCRETE	IGBT	Mass production	TO-3P	PCB insertion	2.5V	3.2V	40A	125W	7.5V
FGA25N120AND	Fairchild Semiconductor	IGBT DISCRETE	IGBT	Mass production	TO-3P	PCB insertion	2.5V	3.2V	40A	125W	7.5V
FGA40N60UFD	Fairchild Semiconductor	IGBT DISCRETE	IGBT	Mass production	TO-3P	PCB insertion	2.3V	3V	40A	64W	6.5V
FGA50N60LS	Fairchild Semiconductor	IGBT DISCRETE	IGBT	Mass production	TO-3P	PCB insertion	1.6V	1.8V	100A	96W	7.5V
FGAF40N60UF	Fairchild Semiconductor	IGBT DISCRETE	Ultrafast IGBT	Mass production	TO-3PF	PCB insertion	2.3V	3V	40A	40W	6.5V
FGAF40N60UFD	Fairchild Semiconductor	IGBT DISCRETE	Ultrafast IGBT	Mass production	TO-3PF	PCB insertion	2.3V	3V	40A	40W	6.5V
FGB20N6S2	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT	Mass production	TO-263AB	Surface mount technology	2.2V	2.7V	28A	125W	5V
FGB20N6S2D	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode	Mass production	TO-263AB	Surface mount technology	2.2V	2.7V	28A	125W	5V
FGB20N6S2DT	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode	Mass production	TO-263AB	Surface mount technology	2.2V	2.7V	28A	125W	5V
FGB20N6S2T	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT	Mass production	TO-263AB	Surface mount technology	2.2V	2.7V	28A	125W	5V
FGB30N6S2	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT	Mass production	TO-263AB	Surface mount technology	2V	2.5V	45A	167W	5V
FGB30N6S2D	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode	Mass production	TO-263AB	Surface mount technology	1.95V	2.5V	45A	167W	5V
FGB30N6S2T	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT	Mass production	TO-263AB	Surface mount technology	2V	2.5V	45A	167W	5V
FGB40N6S2	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT	Mass production	TO-263AB	Surface mount technology	1.9V	2.7V	75A	290W	5V
FGB40N6S2T	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT	Mass production	TO-263AB	Surface mount technology	1.9V	2.7V	75A	290W	5V
FGH20N6S2	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT	Mass production	TO-247	PCB insertion	2.2V	2.7V	28A	125W	5V
FGH20N6S2D	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode	Mass production	TO-247	PCB insertion	2.2V	2.7V	28A	125W	5V
FGH30N6S2	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT	Mass production	TO-247	PCB insertion	2V	2.5V	45A	167W	5V
FGH30N6S2D	Fairchild Semiconductor	IGBT DISCRETE	600V,SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode	Mass production	TO-247	PCB insertion	1.95V	2.5V	45A	167W	5V