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BIPOLAR TRANSISTORS

Discrete > TRANSISTORS > BIPOLAR TRANSISTORS (548)
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Product lifecycle stage
Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Min]
Pin Pitch[Typ]
Pin Pitch[Max]
Number of terminals[Nom]
AEC compliant
Junction temperature[Max] (Cel)
Number of transistors[Nom]
Number of NPN transistors[Nom]
Number of PNP transistors[Nom]
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
DC current gain[Min]
DC current gain[Max]
Collector-emitter saturation voltage 1[Typ] (V)
Collector-emitter saturation voltage 1[Max] (V)
Collector-emitter saturation voltage 2[Typ] (V)
Collector-emitter saturation voltage 2[Max] (V)
Collector-emitter saturation voltage 3[Typ] (V)
Collector-emitter saturation voltage 3[Max] (V)
Collector-emitter saturation voltage 4[Max] (V)
Collector-emitter voltage[Max] (V)
TR polarity
Applied filter
Manufecturer =
Renesas Electronics

Purchase Number of records to be displayed:
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR Scheduled to be discontinued 10.6mm 4.8mm 15.5mm PCB insertion 2.54mm 3 - 150Cel 1 0 1 -7A 1.5W 100 200 -0.6V -5A -100V PNP 2micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR Scheduled to be discontinued 10.6mm 4.8mm 15.5mm PCB insertion 2.54mm 3 - 150Cel 1 0 1 -7A 1.5W 60 120 -0.6V -5A -100V PNP 2micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR Scheduled to be discontinued 10.6mm 4.8mm 15.5mm PCB insertion 2.54mm 3 - 150Cel 1 0 1 -7A 1.5W 40 80 -0.6V -5A -100V PNP 2micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production TO-220SMD/MP-25Z 10mm 8.5mm Surface mount technology 2.54mm 3 - 150Cel 1 0 1 -5A 1.5W 100 200 -0.6V -3A -80V PNP 3micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production TO-220SMD/MP-25Z 10mm 8.5mm Surface mount technology 2.54mm 3 - 150Cel 1 0 1 -5A 1.5W 60 120 -0.6V -3A -80V PNP 3micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production TO-220SMD/MP-25Z 10mm 8.5mm Surface mount technology 2.54mm 3 - 150Cel 1 0 1 -5A 1.5W 40 80 -0.6V -3A -80V PNP 3micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production TO-220AB/MP-25 10.6mm PCB insertion 2.54mm 3 - 150Cel 1 0 1 -5A 1.5W 100 200 -0.6V -3A -60V PNP 3micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production TO-220AB/MP-25 10.6mm PCB insertion 2.54mm 3 - 150Cel 1 0 1 -5A 1.5W 60 120 -0.6V -3A -60V PNP 3micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Mass production TO-220AB/MP-25 10.6mm PCB insertion 2.54mm 3 - 150Cel 1 0 1 -5A 1.5W 40 80 -0.6V -3A -60V PNP 3micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Scheduled to be discontinued SC-59A/PLSP0003ZB-A/MPAK(T)/MPAK(T)V 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -500mA 150mW 100 200 -0.2V -0.6V -150mA -35V PNP
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Scheduled to be discontinued SC-59A/PLSP0003ZB-A/MPAK(T)/MPAK(T)V 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -500mA 150mW 100 200 -0.2V -0.6V -150mA -35V PNP
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Scheduled to be discontinued SC-59A/PLSP0003ZB-A/MPAK(T)/MPAK(T)V 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -500mA 150mW 160 320 -0.2V -0.6V -150mA -35V PNP
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Scheduled to be discontinued SC-59A/PLSP0003ZB-A/MPAK(T)/MPAK(T)V 2.9mm 1.5mm 1.1mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -500mA 150mW 160 320 -0.2V -0.6V -150mA -35V PNP
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS HIGH FREQUENCY AMPLIFIER, MINI MOLD, PNP SILICON EPITAXAL TRANSISTOR New design not recommended 2.9mm 1.5mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -30mA 200mW 40 80 -0.09V -0.3V -10mA -40V PNP 3.5dB
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS HIGH FREQUENCY AMPLIFIER, MINI MOLD, PNP SILICON EPITAXAL TRANSISTOR New design not recommended 2.9mm 1.5mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -30mA 200mW 60 120 -0.09V -0.3V -10mA -40V PNP 3.5dB
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS HIGH FREQUENCY AMPLIFIER, MINI MOLD, PNP SILICON EPITAXAL TRANSISTOR New design not recommended 2.9mm 1.5mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -30mA 200mW 90 180 -0.09V -0.3V -10mA -40V PNP 3.5dB
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS MINI MOLD HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR Scheduled to be discontinued 2.9mm 1.5mm 1.2mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -100mA 200mW 90 180 -0.21V -0.3V -50mA -200V PNP 0.18micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS MINI MOLD HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR Scheduled to be discontinued 2.9mm 1.5mm 1.2mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -100mA 200mW 135 270 -0.21V -0.3V -50mA -200V PNP 0.18micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS MINI MOLD HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR Scheduled to be discontinued 2.9mm 1.5mm 1.2mm Surface mount technology 0.95mm 3 - 150Cel 1 0 1 -100mA 200mW 200 450 -0.21V -0.3V -50mA -200V PNP 0.18micros
Renesas Electronics
GENERAL PURPOSE BIPOLAR TRANSISTORS Scheduled to be discontinued TO-252/MP-3Z 7mm 6.5mm 2.3mm Surface mount technology 2mm 2.3mm 2.6mm 3 - 150Cel 1 0 1 -5A 1W 200 400 -0.18V -0.3V -2A -60V PNP 0.88micros 3.5micros