IC > GALLIUM ARSENIDE DEVICES > HIGH ELECTRON MOBILITY TRANSISTORS (10)
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NEXTY sales results
Product lifecycle stage
Package type
Mounting method
Drain-source voltage limit[Max] (V)
Gate-source voltage limit[Max] (V)
Total power dissipation[Max] (W)
Saturation drain current[Typ] (A)
Gate-source breakdown voltage[Min] (V)
Associated gain[Min] (dB)
Associated gain[Typ] (dB)
Thermal resistance[Max] (Cel/W)
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NXP Semiconductors

Purchase Number of records to be displayed:
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistors Production discontinued PLD-1.5 Surface mount technology 22.7W 6.6Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistors Production discontinued PLD-1.5 Surface mount technology 8.1W 18.5Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistors Production discontinued PLD-1.5 Surface mount technology 22.7W 6.6Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistors Production discontinued PLD-1.5 Surface mount technology 8.1W 18.5Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistor Production discontinued PLD-1.5 Surface mount technology 10.5W 14.2Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistor Production discontinued PLD-1.5 Surface mount technology 10.5W 14.2Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistors Production discontinued PLD-1.5 Surface mount technology 22.7W 6.6Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistors Production discontinued PLD-1.5 Surface mount technology 22.7W 6.6Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistor Production discontinued NI-360HF Surface mount technology 28.3W 5.3Cel/W
NXP Semiconductors
HIGH ELECTRON MOBILITY TRANSISTORS Gallium Arsenide PHEMT RF Power Field Effect Transistor Discontinued products Surface mount technology 79W 1.9Cel/W