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TRANSISTORS

Discrete > TRANSISTORS (18)
    BIPOLAR TRANSISTORS (17)
    Lower level
    1. GENERAL PURPOSE BIPOLAR TRANSISTORS (17)
    2. GENERAL PURPOSE BIPOLAR TRANSISTORS (0)
    FIELD EFFECT TRANSISTORS (1)
    Lower level
    1. JUNCTION FETS (0)
    2. MOS FETS (1)
    IGBTS (0)
    Lower level
    1. IGBT MODULES (0)
    2. IPMS(Intelligent Power Modules) (0)
    3. IGBT DISCRETE (0)
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NXP Semiconductors
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NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT323/SC-70 2mm 1.25mm Surface mount technology 0.65mm 3 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT223/SC-73 6.5mm 3.5mm 1.595mm Surface mount technology 2.3mm 4 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT89/TO-243/SC-62 4.5mm 2.5mm 1.5mm Surface mount technology 1.5mm 3 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon germanium RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon germanium RF transistor Mass production SOT883C 1mm 0.6mm 0.32mm Surface mount technology 0.175mm 3 - 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon germanium RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon germanium RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 1
NXP Semiconductors
MOS FETS RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET New design not recommended PLD-1.5/466-03 6.605mm 5.845mm 1.74mm Surface mount technology 4 - 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT323 Surface mount technology 1.3mm 3 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT23 Surface mount technology 1.9mm 3 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT143B Surface mount technology 1.7mm 4 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT143B Surface mount technology 1.7mm 4 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT143R Surface mount technology 1.7mm 4 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT89 Surface mount technology 1.5mm 3 ○ 1
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT223 Surface mount technology 2.3mm 4 ○ 1