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BIPOLAR TRANSISTORS

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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Typ]
Number of terminals[Nom]
AEC compliant
Junction temperature[Max] (Cel)
Number of transistors[Nom]
Number of NPN transistors[Nom]
Number of PNP transistors[Nom]
Collector current (DC)[Max] (A)
Collector-emitter power dissipation[Max] (W)
DC current gain[Min]
DC current gain[Max]
Collector-emitter saturation voltage 1[Typ] (V)
Collector-emitter saturation voltage 1[Max] (V)
Collector-emitter voltage[Max] (V)
TR polarity
Applied filter
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NXP Semiconductors

Purchase Number of records to be displayed:
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT323/SC-70 2mm 1.25mm Surface mount technology 0.65mm 3 ○ 150Cel 1 1 0 50mA 450mW 60 200 12V NPN 0.6dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT223/SC-73 6.5mm 3.5mm 1.595mm Surface mount technology 2.3mm 4 ○ 150Cel 1 1 0 200mA 2000mW 60 130 12V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT89/TO-243/SC-62 4.5mm 2.5mm 1.5mm Surface mount technology 1.5mm 3 ○ 150Cel 1 1 0 200mA 2000mW 60 130 16V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 150Cel 1 1 0 30mA 200mW 90 180 5.5V NPN 0.85dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 150Cel 1 1 0 60mA 225mW 90 180 5.5V NPN 0.65dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 150Cel 1 1 0 100mA 490mW 90 180 5.5V NPN 0.65dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon germanium RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 150Cel 1 1 0 30mA 197mW 205 555 2.8V NPN 1.3dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon germanium RF transistor Mass production SOT883C 1mm 0.6mm 0.32mm Surface mount technology 0.175mm 3 - 125Cel 1 1 0 30mA 160mW 205 555 3V NPN 0.75dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon germanium RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 150Cel 1 1 0 70mA 220mW 155 505 2.8V NPN 0.5dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon germanium RF transistor Mass production SOT343F 2mm 1.25mm 0.7mm Surface mount technology 1.15mm 4 - 150Cel 1 1 0 100mA 234mW 235 585 2.8V NPN 0.4dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT323 Surface mount technology 1.3mm 3 ○ 150Cel 1 30mA 450mW 60 200 12V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT23 Surface mount technology 1.9mm 3 ○ 150Cel 1 30mA 450mW 60 200 12V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT143B Surface mount technology 1.7mm 4 ○ 150Cel 1 30mA 450mW 60 200 12V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT143B Surface mount technology 1.7mm 4 ○ 150Cel 1 30mA 450mW 60 200 12V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT143R Surface mount technology 1.7mm 4 ○ 150Cel 1 30mA 450mW 60 200 12V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT89 Surface mount technology 1.5mm 3 ○ 150Cel 1 60mA 1000mW 60 130 12V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN wideband silicon RF transistor Mass production SOT223 Surface mount technology 2.3mm 4 ○ 150Cel 1 60mA 1000mW 60 130 12V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN 9 GHz wideband transistors Production discontinued SOT343N 2mm 1.25mm Surface mount technology 1.15mm 4 - 175Cel 1 1 0 70mA 500mW 60 250 15V NPN 1.1dB 1.6dB
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN 5 GHz wideband transistor Production discontinued SOT223/SC-73 Surface mount technology 2.3mm 4 - 175Cel 1 100mA 1W 25 15V NPN
NXP Semiconductors
GENERAL PURPOSE BIPOLAR TRANSISTORS NPN 8 GHz wideband transistor Production discontinued SOT23/TO-236AB Surface mount technology 0.95mm 3 - 175Cel 1 50mA 300mW 60 10V NPN