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MOS FETS

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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Number of terminals[Nom]
AEC compliant
Channel temperature[Max] (Cel)
Number of transistors[Nom]
Channel type
Drain current (DC)[Max] (A)
Allowable power dissipation[Max] (W)
Gate-source threshold voltage[Min] (V)
Gate-source threshold voltage[Max] (V)
Drain-source voltage[Max] (V)
Drain-source current[Max] (A)
Applied filter
Manufecturer =
NXP Semiconductors
Product lifecycle stage =
Development in progress
Scheduled to be discontinued
New design not recommended
Advance preparation
Mass production

Purchase Number of records to be displayed:
NXP Semiconductors
MOS FETS RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET New design not recommended PLD-1.5/466-03 6.605mm 5.845mm 1.74mm Surface mount technology 4 - 150Cel 1 N ch 4A 62.5W 1V 2.1V 40V 1microA