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Package type
Body length[Typ]
Body breadth[Typ]
Body height[Typ]
Mounting method
Pin Pitch[Typ]
Number of terminals[Nom]
AEC compliant
Channel temperature[Max] (Cel)
Number of transistors[Nom]
Constructing devices
Channel type
Drain current (DC)[Max] (A)
Allowable power dissipation[Max] (W)
Gate-source threshold voltage[Min] (V)
Gate-source threshold voltage[Max] (V)
Drain-source voltage[Max] (V)
Drain-source current[Min] (A)
Drain-source current[Max] (A)
Drain-source on-resistance @10V[Typ] (Ohm)
Drain-source on-resistance @10V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@10V[Typ] (V)
Drain-source on-resistance @4.5Vor4V[Typ] (Ohm)
Drain-source on-resistance @4.5Vor4V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@4.5Vor4V[Typ] (V)
Drain-source on-resistance @2.5V[Typ] (Ohm)
Drain-source on-resistance @2.5V[Max] (Ohm)
Gate-source voltage at R_DS(on)_@2.5V[Typ] (V)
Drain-source on-resistance 1[Typ] (Ohm)
Drain-source on-resistance 1[Max] (Ohm)
Gate-source voltage 1 at R_DS(on)_1[Typ] (V)
Drain-source on-resistance 2[Typ] (Ohm)
Drain-source on-resistance 2[Max] (Ohm)
Gate-source voltage 2 at R_DS(on)_2[Typ] (V)
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NXP Semiconductors

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NXP Semiconductors
MOS FETS RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET New design not recommended PLD-1.5/466-03 6.605mm 5.845mm 1.74mm Surface mount technology 4 - 150Cel 1 N ch 4A 62.5W 1V 2.1V 40V 1microA
NXP Semiconductors
MOS FETS N-channel junction FET Production discontinued SOT23/TO-236AB 2.9mm 1.3mm 1mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch 40mA 300mW -0.3V -1.2V 20V 25mA
NXP Semiconductors
MOS FETS Dual-gate MOS-FETs Production discontinued SOT143R 2.9mm 1.3mm Surface mount technology 1.7mm 4 - 1 N ch 40mA 200mW 12V 3mA 27mA
NXP Semiconductors
MOS FETS P-channel enhancement mode MOS transistor Discontinued products SOT23 2.9mm 1.3mm 1mm Surface mount technology 0.95mm 3 - 150Cel 1 P ch -0.3A 0.417W -1V -60V -100nA 2.1Ohm 2.5Ohm -10V 2.7Ohm 3.75Ohm -4.5V
NXP Semiconductors
MOS FETS P-channel enhancement mode MOS transistor Discontinued products SOT23 2.9mm 1.3mm 1mm Surface mount technology 0.95mm 3 - 150Cel 1 P ch -0.52A 0.417W -0.4V -30V -10microA 0.63Ohm 0.9Ohm -10V 0.89Ohm 1.35Ohm -4.5V 0.95Ohm 1.35Ohm -10V
NXP Semiconductors
MOS FETS P-channel enhancement mode MOS transistor Discontinued products SOT23 2.9mm 1.3mm 1mm Surface mount technology 0.95mm 3 - 150Cel 1 P ch -0.47A 0.417W -0.4V -30V -100nA 0.66Ohm 0.9Ohm -4.5V 0.92Ohm 1.1Ohm -2.5V 1.1Ohm 1.2Ohm -1.8V
NXP Semiconductors
MOS FETS N-channel enhancement mode vertical D-MOS transistor Discontinued products SOT223/SC-73 6.5mm 3.5mm 1.65mm Surface mount technology 2.3mm 4 - 150Cel 1 N ch 375mA 1.5W 0.8V 2V 250V 1microA 2.8Ohm 5Ohm 10V 7.5Ohm 2.4V
NXP Semiconductors
MOS FETS N-channel enhancement mode vertical D-MOS transistor Discontinued products SOT223/SC-73 6.5mm 3.5mm 1.65mm Surface mount technology 2.3mm 4 - 150Cel 1 N ch 350mA 1.5W 0.8V 2V 300V 100nA 3.7Ohm 6Ohm 10V 4.8Ohm 10Ohm 2.4V
NXP Semiconductors
MOS FETS P-channel enhancement mode vertical D-MOS transistor Discontinued products SOT223 6.5mm 3.5mm 1.65mm Surface mount technology 2.3mm 4 - 150Cel 1 P ch -225mA 1.5W -0.8V -2.8V -250V -1microA 10Ohm 15Ohm -10V
NXP Semiconductors
MOS FETS N-channel TrenchMOS transistor Logic level FET Discontinued products SOT23 2.9mm 1.3mm 1mm Surface mount technology 0.95mm 3 - 150Cel 1 N ch 150mA 0.25W 1V 2.8V 100V 100nA 3.5Ohm 6Ohm 10V
NXP Semiconductors
MOS FETS MOSFET N-channel enhancement switching transistor Production discontinued SOT143B 2.9mm 1.3mm 1mm Surface mount technology 1.7mm 4 - 125Cel 1 N ch 50mA 230mW 0.1V 2V 10V 45Ohm 10V 80Ohm 120Ohm 3.2V 70Ohm 5V
NXP Semiconductors
MOS FETS 200 V, N-channel vertical D-MOS transistor Discontinued products SOT89/TO-243/SC-62 4.5mm 2.5mm 1.5mm Surface mount technology 1.5mm 3 - 150Cel 1 N ch 0.2A 0.58W 0.8V 2.8V 200V 60microA 1.6Ohm 3Ohm 10V 1.9Ohm 4Ohm 4.5V 3.7Ohm 7Ohm 10V
NXP Semiconductors
MOS FETS TrenchMOS transistor Logic level FET Discontinued products SOT223 6.5mm 3.5mm 1.65mm Surface mount technology 2.3mm 4 - 150Cel 1 N ch 3.5A 1.8W 0.6V 2.3V 55V 100microA 148mOhm 5V 65mOhm 80mOhm 5V
NXP Semiconductors
MOS FETS N-channel silicon field-effect transistors Production discontinued SOT23 2.9mm 1.3mm 1mm Surface mount technology 0.95mm 3 - 1 N ch 30mA 250mW -1V -4V 25V 12mA 30mA 50Ohm 0V
NXP Semiconductors
MOS FETS Dual N-channel microTrenchMOS extremely low level FET Discontinued products SOT363/SC-88 2mm 1.25mm 0.9mm Surface mount technology 0.65mm 6 - 150Cel 2 N ch 0.74A 0.41W 0.35V 1.8V 30V 100microA 629mOhm 748mOhm 4.5V 550mOhm 650mOhm 2.5V 370mOhm 440mOhm 4.5V